公开(公告)号：US09786761B2

公开(公告)日：2017-10-10

申请号：US14955205

申请日：2015-12-01

申请人： Dong-soo Lee ,  Hu-yong Lee ,  Won-keun Chung ,  Hoon-joo Na ,  Taek-soo Jeon ,  Sang-jin Hyun

发明人： Dong-soo Lee ,  Hu-yong Lee ,  Won-keun Chung ,  Hoon-joo Na ,  Taek-soo Jeon ,  Sang-jin Hyun

IPC分类号： B82Y10/00 ,  H01L29/51 ,  H01L27/092 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06

CPC分类号： H01L29/512 ,  B82Y10/00 ,  H01L21/28185 ,  H01L21/823456 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/785

摘要： An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer.