A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.