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    Plasma density control on substrate edge
    2.
    发明授权
    Plasma density control on substrate edge 有权

    公开(公告)号：US10790121B2

    公开(公告)日：2020-09-29

    申请号：US15947393

    申请日：2018-04-06

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar Kumar ,  Prashanth Kothnur ,  Sidharth Bhatia ,  Anup Kumar Singh ,  Vivek Bharat Shah ,  Ganesh Balasubramanian ,  Changgong Wang

    IPC: H01J37/32

    Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.

    Apparatus and methods for removing contaminant particles in a plasma process
    3.
    发明授权
    Apparatus and methods for removing contaminant particles in a plasma process 有权

    公开(公告)号：US10714319B2

    公开(公告)日：2020-07-14

    申请号：US16262307

    申请日：2019-01-30

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar Kumar ,  Anup Kumar Singh ,  Vivek Bharat Shah ,  Sidharth Bhatia ,  Ganesh Balasubramanian

    IPC: H01J37/32 ,  H01L21/67

    Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

    ALUMINUM NITRIDE BARRIER LAYER
    5.
    发明申请
    ALUMINUM NITRIDE BARRIER LAYER 有权
    氮化铝阻挡层

    公开(公告)号：US20160254181A1

    公开(公告)日：2016-09-01

    申请号：US14634512

    申请日：2015-02-27

    Applicant: Applied Materials, Inc.

    Inventor： Deenesh Padhi ,  Srinivas Guggilla ,  Alexandros T. Demos ,  Bhaskar Kumar ,  He Ren ,  Priyanka Dash

    IPC: H01L21/768 ,  H01L21/02

    CPC classification number: H01L21/76813 ,  H01L21/02458 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76862 ,  H01L23/53295

    Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.

    Abstract translation: 描述了在电介质层中形成特征的方法。 通孔，沟槽或双镶嵌结构可能在沉积保形氮化铝层之前存在于电介质层中。 保形氮化铝层被配置为用作屏障以防止穿过屏障的扩散。 形成氮化铝层的方法涉及交替暴露于两种前体处理（如ALD）以实现高共形性。 氮化铝阻挡层的高共形度使得能够减小厚度，并且随后的间隙填充金属层的有效导电性增加。

    Methods of seasoning process chambers
    6.
    发明授权
    Methods of seasoning process chambers 有权

    公开(公告)号：US11996273B2

    公开(公告)日：2024-05-28

    申请号：US17075801

    申请日：2020-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Anup Kumar Singh

    IPC: C23C16/44 ,  H01J37/32

    CPC classification number: H01J37/32862 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32522

    Abstract: Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a method for seasoning a process chamber includes depositing a seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200° C. or about 200° C. to about 400° C. The method includes depositing a deposition film onto the seasoning film. In at least one embodiment, a method includes introducing a nitrogen-containing gas to the seasoning film to form a nitrogen-treated seasoning film. Introducing the nitrogen-containing gas to the seasoning film is performed before depositing the deposition film onto the seasoning film.

    Plasma density control on substrate edge
    7.
    发明授权
    Plasma density control on substrate edge 有权

    公开(公告)号：US11495440B2

    公开(公告)日：2022-11-08

    申请号：US16996004

    申请日：2020-08-18

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar Kumar ,  Prashanth Kothnur ,  Sidharth Bhatia ,  Anup Kumar Singh ,  Vivek Bharat Shah ,  Ganesh Balasubramanian ,  Changgong Wang

    IPC: H01J37/32

    Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

    Selective poreseal deposition prevention and residue removal using SAM
    8.
    发明授权
    Selective poreseal deposition prevention and residue removal using SAM 有权

    公开(公告)号：US10074559B1

    公开(公告)日：2018-09-11

    申请号：US15452394

    申请日：2017-03-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Geetika Bajaj ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Bhaskar Kumar ,  Deenesh Padhi

    IPC: H01L21/32 ,  H01L21/768

    Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.

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