Invention Grant
- Patent Title: Methods of forming semiconductor device including capacitors with modified sidewalls and related devices
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Application No.: US14509828Application Date: 2014-10-08
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Publication No.: US09793133B2Publication Date: 2017-10-17
- Inventor: Chan-Won Kim , Jung-Woo Seo , Kee-Hong Lee , Kyoung-Ryul Yoon , Seong-Kyu Yun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2014-0010769 20140128
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/108 ; H01L49/02

Abstract:
Methods of forming a semiconductor device can be provided by forming a first molding layer on a substrate and forming a first hole through the first molding layer. A second molding layer can be formed on the first molding layer so that the first hole is retained in the first molding layer and a second hole can be formed through the second molding layer to connect with the first hole. A capacitor electrode can be formed in the first and second holes.
Public/Granted literature
- US20150214289A1 METHODS OF FORMING SEMICONDUCTOR DEVICE INCLUDING CAPACITORS WITH MODIFIED SIDEWALLS AND RELATED DEVICES Public/Granted day:2015-07-30
Information query
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