公开(公告)号：US09793133B2

公开(公告)日：2017-10-17

申请号：US14509828

申请日：2014-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Won Kim ,  Jung-Woo Seo ,  Kee-Hong Lee ,  Kyoung-Ryul Yoon ,  Seong-Kyu Yun

IPC: H01L21/311 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L21/311 ,  H01L21/31116 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/90

Abstract: Methods of forming a semiconductor device can be provided by forming a first molding layer on a substrate and forming a first hole through the first molding layer. A second molding layer can be formed on the first molding layer so that the first hole is retained in the first molding layer and a second hole can be formed through the second molding layer to connect with the first hole. A capacitor electrode can be formed in the first and second holes.