Invention Grant
- Patent Title: Power semiconductor device including a cooling material
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Application No.: US14595669Application Date: 2015-01-13
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Publication No.: US09793255B2Publication Date: 2017-10-17
- Inventor: Joachim Mahler , Ralf Otremba , Hans-Joachim Schulze , Guenther Ruhl , Hans-Joerg Timme
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/02 ; H01L27/088 ; H01L27/06 ; H01L23/427 ; H01L23/367 ; H01L29/49 ; H01L29/78 ; H01L23/525 ; H01L29/861 ; H01L29/739
Abstract:
A power semiconductor device includes a wiring structure adjoining at least one side of a semiconductor body and comprising at least one electrically conductive compound. The power semiconductor device further includes a cooling material in the wiring structure. The cooling material is characterized by a change in structure by means of absorption of energy at a temperature TC ranging between 150° C. and 400° C.
Public/Granted literature
- US20150123142A1 POWER SEMICONDUCTOR DEVICE INCLUDING A COOLING MATERIAL Public/Granted day:2015-05-07
Information query
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