Invention Grant
- Patent Title: Semiconductor device having insulating pattern and method of forming the same
-
Application No.: US14573429Application Date: 2014-12-17
-
Publication No.: US09793399B2Publication Date: 2017-10-17
- Inventor: Pan-Kwi Park , Koung-Min Ryu , Moon-Han Park , Hyung-suk Jung , Jong-hoon Baek , Su-Young Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2014-0090622 20140717
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L21/8234 ; H01L21/8238 ; H01L29/49 ; H01L29/51 ; H01L29/165
Abstract:
A semiconductor device includes a stressor and an insulating pattern. A device isolation layer is formed to define an active area on a substrate. A first gate electrode is formed on the active area. A second gate electrode is formed on the device isolation layer. A trench is formed in the active area between the first gate electrode and the second gate electrode. A stressor is formed in the trench. A cavity formed between the stressor and the device isolation layer and adjacent to the second gate electrode is disposed. An insulating pattern is formed in the cavity.
Public/Granted literature
- US20160020324A1 SEMICONDUCTOR DEVICE HAVING INSULATING PATTERN AND METHOD OF FORMING THE SAME Public/Granted day:2016-01-21
Information query
IPC分类:
