- 专利标题： Indium electroplating compositions containing 1,10-phenanthroline compounds and methods of electroplating indium
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申请号： US15212737申请日： 2016-07-18
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公开(公告)号： US09809892B1公开(公告)日： 2017-11-07
- 发明人: Yi Qin , Kristen Flajslik , Mark Lefebvre
- 申请人： Rohm and Haas Electronic Materials LLC
- 申请人地址： US MA Marlborough
- 专利权人： Rohm and Haas Electronic Materials LLC
- 当前专利权人： Rohm and Haas Electronic Materials LLC
- 当前专利权人地址： US MA Marlborough
- 代理商 John J. Piskorski
- 主分类号： C25D3/00
- IPC分类号： C25D3/00 ; C25D3/54 ; C25D21/04 ; C25D5/02 ; C25D7/12
摘要：
Iridium electroplating compositions containing 1,10-phenanthroline compounds in trace amounts to electroplate substantially defect-free uniform and smooth surface morphology indium on metal layers. The indium electroplating compositions can be used to electroplate indium metal on metal layers of various substrates such as semiconductor wafers and as thermal interface materials.
公开/授权文献
- US2291218A Nozzle 公开/授权日：1942-07-28
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