- 专利标题: Method of forming interconnect structures by self-aligned approach
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申请号: US15601588申请日: 2017-05-22
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公开(公告)号: US09824922B1公开(公告)日: 2017-11-21
- 发明人: Chih-Hao Chen , Ta-Ching Yu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L21/033 ; H01L23/528 ; H01L21/311
摘要:
A method includes forming a dielectric layer over a conductive feature. A first mask having a first opening is formed over the dielectric layer. A second mask is formed over the first mask. A third mask having a second opening is formed over the second mask. A fourth mask having a third opening is formed over the third mask, a portion of the third opening overlapping with the second opening. The portion of the third opening is transferred to the second mask to form a fourth opening, a portion of the fourth opening overlapping with the first opening. The portion of the fourth opening is transferred to the dielectric layer to form a fifth opening. The fifth opening is extended into the dielectric layer to form an extended fifth opening, the extended fifth opening exposing the conductive feature. The extended fifth opening is filled with a conductive material.
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