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    METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS
    7.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS 审中-公开
    制造具有降低TRENCH偏差的半导体器件的方法

    公开(公告)号：US20160358788A1

    公开(公告)日：2016-12-08

    申请号：US15237898

    申请日：2016-08-16

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yung-Sung Yen ,  Chung-Ju Lee ,  Chun-Kuang Chen ,  Chia-Tien Wu ,  Ta-Ching Yu ,  Kuei-Shun Chen ,  Ru-Gun Liu ,  Shau-Lin Shue ,  Tsai-Sheng Gau ,  Yung-Hsu Wu

    IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/033

    CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/823481 ,  H01L21/823878

    摘要： A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.

    摘要翻译： 一种方法包括在衬底上形成材料层，在材料层上形成第一硬掩模（HM）层，沿第一方向在第一HM层中形成第一沟槽。 该方法还包括沿着第一沟槽的侧壁形成第一间隔物，通过使用第一间隔件来保护第一沟槽，形成平行于第一沟槽的第一HM层中的第二沟槽。 该方法还包括通过第一沟槽和第二沟槽蚀刻材料层，去除第一HM层和第一间隔物，在材料层上形成第二HM层，在第二HM层中形成第三沟槽。 第三沟槽沿着垂直于第一方向的第二方向延伸并且与第一沟槽重叠。 该方法还包括通过第三沟槽蚀刻材料层。

    Method of fabricating semiconductor device
    8.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09412649B1

    公开(公告)日：2016-08-09

    申请号：US14621660

    申请日：2015-02-13

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yung-Sung Yen ,  Chung-Ju Lee ,  Chun-Kuang Chen ,  Chia-Tien Wu ,  Ta-Ching Yu ,  Kuei-Shun Chen ,  Ru-Gun Liu ,  Shau-Lin Shue ,  Tsai-Sheng Gau ,  Yung-Hsu Wu

    IPC分类号： H01L21/308 ,  H01L21/768 ,  H01L21/311 ,  H01L23/538 ,  H01L21/033 ,  H01L21/027

    CPC分类号： H01L21/76816 ,  H01L21/0274 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811

    摘要： A method for fabricating a semiconductor device includes forming a hard mask (HM) layer over a material layer, forming a first trench in the HM layer, which extends along a first direction. The method also includes forming a first patterned resist layer over the HM layer. The first patterned resist layer has a first opening and a second opening a second direction. The first opening overlaps with the first trench in a middle portion of the first trench and the second opening overlaps with the first trench at an end portion of the first trench. The method also includes etching the HM layer through the first patterned resist layer to form a second trench and a third trench in the HM layer and forming a first feature to fill in a section of the first trench between the second trench and the third trench.

    摘要翻译： 制造半导体器件的方法包括在材料层上形成硬掩模（HM）层，在HM层中形成沿着第一方向延伸的第一沟槽。 该方法还包括在HM层上形成第一图案化抗蚀剂层。 第一图案化抗蚀剂层具有第一开口和第二开口的第二方向。 第一开口与第一沟槽的中间部分中的第一沟槽重叠，并且第二开口在第一沟槽的端部处与第一沟槽重叠。 该方法还包括通过第一图案化抗蚀剂层蚀刻HM层以在HM层中形成第二沟槽和第三沟槽，并形成第一特征以填充第二沟槽和第三沟槽之间的第一沟槽的一部分。