Invention Grant
- Patent Title: FinFET PCM access transistor having gate-wrapped source and drain regions
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Application No.: US14832108Application Date: 2015-08-21
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Publication No.: US09825093B2Publication Date: 2017-11-21
- Inventor: Chung H. Lam , Chung-Hsun Lin , Darsen D. Lu , Philip J. Oldiges
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Michael Le Strange
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L29/08 ; H01L45/00 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/311 ; H01L21/8234 ; H01L29/423
Abstract:
Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.
Public/Granted literature
- US20170053966A1 FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN REGIONS Public/Granted day:2017-02-23
Information query
IPC分类:
