- 专利标题： Monomer, polymer, positive resist composition, and patterning process
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申请号： US15204145申请日： 2016-07-07
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公开(公告)号： US09829792B2公开(公告)日： 2017-11-28
- 发明人: Koji Hasegawa , Jun Hatakeyama , Teppei Adachi
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2015-137416 20150709
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/38 ; C07C69/54 ; C07C69/73 ; C08F220/18 ; C08F220/30 ; G03F7/039 ; C08F128/06 ; C08F116/10 ; C08F116/14 ; C08F124/00 ; C08F116/36 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; C07D307/00 ; C07C69/76 ; C07C69/86
摘要：
A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
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