Invention Grant
- Patent Title: Substrate processing apparatus and substrate detaching method
-
Application No.: US14534246Application Date: 2014-11-06
-
Publication No.: US09831112B2Publication Date: 2017-11-28
- Inventor: Shingo Koiwa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2013-234872 20131113
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/50 ; C23F1/00 ; H01L21/306 ; H01L21/683 ; H01J37/32 ; H01L21/67 ; H01L21/3065

Abstract:
A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.
Public/Granted literature
- US20150132969A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE DETACHING METHOD Public/Granted day:2015-05-14
Information query
IPC分类: