公开(公告)号：US11521837B2

公开(公告)日：2022-12-06

申请号：US16797176

申请日：2020-02-21

Applicant: Tokyo Electron Limited

Inventor： Shingo Koiwa

IPC: H01J37/32 ,  H02N13/00 ,  H01L21/683

Abstract: There is provision of a stage including a base; a substrate mount section provided above an upper surface of the base; an annular member mount section provided above the upper surface of the base, so as to surround a periphery of the substrate mount section; a first bonding layer bonding the base and the substrate mount section; a second bonding layer bonding the base and the annular member mount section; an annular member disposed on the annular member mount section; and a sealing member configured to protect the first bonding layer and the second bonding layer.

公开(公告)号：US11798791B2

公开(公告)日：2023-10-24

申请号：US16677902

申请日：2019-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu Sasaki ,  Shingo Koiwa

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32642 ,  H01L21/6833 ,  H01J37/32183 ,  H01J2237/002

Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; and a second support area configured to support a focus ring placed thereon. The second support area includes a lower electrode, a chuck area, and a bonding area. The chuck area includes a first electrode and a second electrode, and is configured to hold the focus ring by a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend in the circumferential direction, and the first electrode is provided inward in the radial direction with respect to the second electrode. The substrate support further includes a first conducting wire and a second conducting wire each extending around a center or on the center between an inner boundary and an outer boundary of the second support area.

公开(公告)号：US10665491B2

公开(公告)日：2020-05-26

申请号：US15459028

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shingo Koiwa

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: A processing apparatus has a pedestal which includes an electrostatic chuck and a cooling table. A plurality of heat transfer spaces are provided between the electrostatic chuck and the cooling table. The plurality of heat transfer spaces are coaxially provided with respect to the center axis of the electrostatic chuck and are separated from each other. The processing apparatus further includes a piping system. The piping system is configured to selectively connect each of the plurality of heat transfer spaces to a chiller unit, a source of a heat transfer gas, and an exhaust device.

公开(公告)号：US09613837B2

公开(公告)日：2017-04-04

申请号：US14395584

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Senzaki ,  Michishige Saito ,  Daiki Satoh ,  Ken Horiuchi ,  Koji Ando ,  Shingo Koiwa

IPC: H01L21/67 ,  H01L21/677 ,  H01J37/32 ,  B25J11/00

CPC classification number: H01L21/67161 ,  B25J11/0095 ,  H01J37/32091 ,  H01J37/32899 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67703 ,  H01L21/67733 ,  H01L21/67736

Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.

公开(公告)号：US10515786B2

公开(公告)日：2019-12-24

申请号：US15270342

申请日：2016-09-20

Applicant: Tokyo Electron Limited

Inventor： Shingo Koiwa ,  Yasuhisa Kudo ,  Katsuyuki Koizumi

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  F28F27/02

Abstract: A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member.

公开(公告)号：US09831112B2

公开(公告)日：2017-11-28

申请号：US14534246

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Shingo Koiwa

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32724 ,  H01J37/32834 ,  H01J37/32844 ,  H01L21/3065 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6838 ,  Y02C20/30 ,  Y02P70/605

Abstract: A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.

公开(公告)号：US20150086302A1

公开(公告)日：2015-03-26

申请号：US14395584

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Senzaki ,  Michishige Saito ,  Daiki Satoh ,  Ken Horiuchi ,  Koji Ando ,  Shingo Koiwa

IPC: H01L21/67 ,  H01L21/677 ,  B25J11/00

CPC classification number: H01L21/67161 ,  B25J11/0095 ,  H01J37/32091 ,  H01J37/32899 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67703 ,  H01L21/67733 ,  H01L21/67736

Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.

Abstract translation: 一种基板处理装置，包括：第一处理室; 第二处理室; 传送室; 框架结构; 和升降部。 第一处理室和第二处理室中的每一个具有主体部和盖部。 传送室连接到第一处理室和第二处理室，并且容纳用于传送基板的转印单元。 框架结构具有一对柱部分和支撑在柱部分顶部的梁部分。 升降部分连接到梁部分以在水平方向上移动，并使盖部分在垂直方向上移动。 梁部分在第一处理室和第二处理室和传送室之上延伸。