- 专利标题： Semiconductor device with a passivation layer
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申请号： US14502882申请日： 2014-09-30
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公开(公告)号： US09859395B2公开(公告)日： 2018-01-02
- 发明人: Gerhard Schmidt , Josef-Georg Bauer , Carsten Schaeffer , Oliver Humbel , Angelika Koprowski , Sirinpa Monayakul
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/66 ; H01L29/40 ; H01L29/861 ; H01L29/739 ; H01L29/78 ; H01L23/31 ; H01L21/283 ; H01L29/47 ; H01L29/06
摘要：
A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.
公开/授权文献
- US20150056788A1 Semiconductor Device with a Passivation Layer 公开/授权日：2015-02-26
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