- 专利标题: Magnetoresistive element and magnetic memory
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申请号: US15259855申请日: 2016-09-08
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公开(公告)号: US09859491B2公开(公告)日: 2018-01-02
- 发明人: Tadaomi Daibou , Yushi Kato , Shumpei Omine , Naoki Hase , Junichi Ito
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2014-050839 20140313
- 主分类号: H01L43/10
- IPC分类号: H01L43/10 ; H01L43/08 ; G11B5/39 ; G01R33/09 ; H01L43/02 ; G11C11/16 ; H01L27/22
摘要:
A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.
公开/授权文献
- US20160380186A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 公开/授权日:2016-12-29