Invention Grant
- Patent Title: Metal oxide film and method for forming metal oxide film
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Application No.: US14071932Application Date: 2013-11-05
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Publication No.: US09881939B2Publication Date: 2018-01-30
- Inventor: Masahiro Takahashi , Takuya Hirohashi , Masashi Tsubuku , Noritaka Ishihara , Masashi Oota
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-245992 20121108; JP2013-016242 20130130; JP2013-056768 20130319
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/04 ; H01L29/24 ; G01N23/207 ; H01L27/12 ; H01L21/66 ; G02F1/1368 ; C23C14/08 ; H01L29/786 ; H01L21/02
Abstract:
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
Public/Granted literature
- US20140124776A1 METAL OXIDE FILM AND METHOD FOR FORMING METAL OXIDE FILM Public/Granted day:2014-05-08
Information query
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