公开(公告)号：US12302639B2

公开(公告)日：2025-05-13

申请号：US18616481

申请日：2024-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L27/12 ,  C23C14/08 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/66 ,  H10D30/67 ,  H10D62/40 ,  H10D62/80 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US11637015B2

公开(公告)日：2023-04-25

申请号：US17491637

申请日：2021-10-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara

IPC: H01L21/02 ,  C30B23/08 ,  C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  C30B29/22 ,  H01J37/34 ,  C30B1/04 ,  C30B28/02 ,  C30B29/68 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US11211467B2

公开(公告)日：2021-12-28

申请号：US16755208

申请日：2018-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tomoki Hiramatsu ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Shota Sambonsuge ,  Yasumasa Yamane ,  Yuta Endo

IPC: H01L29/51 ,  H01L21/8238

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

公开(公告)号：US11195758B2

公开(公告)日：2021-12-07

申请号：US16643195

申请日：2018-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/108 ,  H01L29/786

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US10038100B2

公开(公告)日：2018-07-31

申请号：US15429234

申请日：2017-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masashi Tsubuku ,  Satoru Saito ,  Noritaka Ishihara

IPC: H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

公开(公告)号：US09425217B2

公开(公告)日：2016-08-23

申请号：US14486089

申请日：2014-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka Ishihara ,  Masashi Oota ,  Masashi Tsubuku ,  Masami Jintyou ,  Yukinori Shima ,  Junichi Koezuka ,  Yasuharu Hosaka ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，氧化物半导体膜中的缺陷减少。 提高了包括氧化物半导体膜的半导体器件的电特性。 提高了包括氧化物半导体膜的半导体器件的可靠性。 一种包括氧化物半导体层的半导体器件; 与氧化物半导体层接触的金属氧化物层，所述金属氧化物层包含In-M氧化物（M为Ti，Ga，Y，Zr，La，Ce，Nd或Hf）; 和与金属氧化物层接触的导电层，提供包括铜，铝，金或银的导电层。 在半导体器件中，y /（x + y）大于或等于0.75且小于1，其中包含在金属氧化物层中的In与M的原子比为In：M = x：y。

公开(公告)号：US09281407B2

公开(公告)日：2016-03-08

申请号：US14700433

申请日：2015-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/78 ,  H01L21/336 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US11652110B2

公开(公告)日：2023-05-16

申请号：US17144550

申请日：2021-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L27/12 ,  H01L29/04 ,  H01L21/66 ,  H01L29/24 ,  G02F1/1368 ,  G01N23/207 ,  H01L29/66 ,  C23C14/08 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US11139166B2

公开(公告)日：2021-10-05

申请号：US16730292

申请日：2019-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara

IPC: H01L21/02 ,  H01J37/34 ,  C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  C30B23/08 ,  C30B29/22 ,  C30B1/04 ,  C30B28/02 ,  C30B29/68 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US10461099B2

公开(公告)日：2019-10-29

申请号：US15879506

申请日：2018-01-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/04 ,  H01L21/66 ,  H01L29/24 ,  G02F1/1368 ,  G01N23/207 ,  C23C14/08 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.