- Patent Title: Insulated gate semiconductor device with soft switching behavior
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Application No.: US15299645Application Date: 2016-10-21
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Publication No.: US09899377B2Publication Date: 2018-02-20
- Inventor: Hans-Joachim Schulze , Franz-Josef Niedernostheide , Frank Dieter Pfirsch , Francisco Javier Santos Rodriguez , Stephan Voss , Wolfgang Wagner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Volpe and Koenig, P.C.
- Priority: DE102015118524 20151029
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L27/082 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/739 ; H01L29/66 ; H01L29/749 ; H01L29/08 ; H01L27/06

Abstract:
A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and an electrically conductive gate layer comprising the gate electrodes or electrically connected to the gate electrodes of the plurality of device cells. The gate layer is electrically connected to a gate conductor and includes at least one of an increased resistance region and a decreased resistance region.
Public/Granted literature
- US20170125407A1 INSULATED GATE SEMICONDUCTOR DEVICE WITH SOFT SWITCHING BEHAVIOR Public/Granted day:2017-05-04
Information query
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