Invention Grant
- Patent Title: Method for patterning a microstructure
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Application No.: US15111597Application Date: 2015-01-15
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Publication No.: US09904386B2Publication Date: 2018-02-27
- Inventor: Muthu Sebastian , Michael W. Dolezal
- Applicant: 3M INNOVATIVE PROPERTIES COMPANY
- Applicant Address: US MN St. Paul
- Assignee: 3M INNOVATIVE PROPERTIES COMPANY
- Current Assignee: 3M INNOVATIVE PROPERTIES COMPANY
- Current Assignee Address: US MN St. Paul
- Agent Clifton F. Richardson
- International Application: PCT/US2015/011560 WO 20150115
- International Announcement: WO2015/112419 WO 20150730
- Main IPC: G06F3/041
- IPC: G06F3/041 ; G02F1/1343 ; G06F3/044 ; B32B15/08 ; B32B15/20 ; B32B27/28 ; B32B27/32

Abstract:
The invention relates to a method for patterning one or more portions of a microstructure comprised of a flexible substrate, a conductor disposed on the substrate, and a metal layer disposed on the conductor, wherein the conductor is comprised of a stack of a first and a second transparent conductive oxide (TCO) layer, and a metal doped silicon oxide layer sandwiched between the two TCO layers.
Public/Granted literature
- US20160334895A1 METHOD FOR PATTERNING A MICROSTRUCTURE Public/Granted day:2016-11-17
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