Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture thereof
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Application No.: US14935067Application Date: 2015-11-06
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Publication No.: US09917191B2Publication Date: 2018-03-13
- Inventor: Manfred Eller , Jin-Ping Han
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/332 ; H01L29/78 ; H01L21/8238 ; H01L29/66

Abstract:
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a gate dielectric over the semiconductor wafer, and forming a gate over the gate dielectric. At least one recess is formed in the semiconductor wafer proximate the gate and the gate dielectric, at least a portion of the at least one recess extending beneath the gate. The at least one recess in the semiconductor wafer is filled with a semiconductive material.
Public/Granted literature
- US20160064564A1 Semiconductor Devices and Methods of Manufacture Thereof Public/Granted day:2016-03-03
Information query
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