- Patent Title: Method for making strained semiconductor device and related methods
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Application No.: US15180158Application Date: 2016-06-13
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Publication No.: US09922883B2Publication Date: 2018-03-20
- Inventor: Xiuyu Cai , Qing Liu , Ruilong Xie , Chun-Chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC. , STMICROELECTRONICS, INC.
- Applicant Address: US NY Armonk KY Grand Cayman US TX Coppell
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman US TX Coppell
- Agency: Cantor Colburn LLP
- Agent Steven Meyers
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8238 ; H01L29/08 ; H01L29/786 ; H01L21/84 ; H01L21/768 ; H01L29/78
Abstract:
A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.
Public/Granted literature
- US20160293494A1 METHOD FOR MAKING STRAINED SEMICONDUCTOR DEVICE AND RELATED METHODS Public/Granted day:2016-10-06
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