Invention Grant
- Patent Title: Use of dummy word lines for metadata storage
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Application No.: US14700500Application Date: 2015-04-30
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Publication No.: US09934858B2Publication Date: 2018-04-03
- Inventor: Niles Yang , Rohit Sehgal , Abhilash Kashyap
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Foley & Lardner LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/10 ; G11C11/56 ; G11C16/04 ; G11C16/28 ; G11C7/14 ; G11C16/08 ; G11C16/26

Abstract:
In a non-volatile memories formed according to a NAND type of architecture, one or more of the end word lines on the source end, drain end, or both are set aside as dummy word lines that are not used to store user data. In addition to the host data, a memory system typically also stores metadata, or information about the user data, how it is stored and the memory system itself. Techniques are presented for using the dummy word lines of the memory blocks to hold this metadata. This arrangement allows for the metadata of a memory block to be known in real time, without reducing the storage capacity of the memory system.
Public/Granted literature
- US20160322108A1 Use of Dummy Word Lines for Metadata Storage Public/Granted day:2016-11-03
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