Invention Grant
- Patent Title: High electron mobility transistor fabrication process on reverse polarized substrate by layer transfer
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Application No.: US15122627Application Date: 2014-06-13
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Publication No.: US09935191B2Publication Date: 2018-04-03
- Inventor: Kimin Jun , Sansaptak Dasgupta , Alejandro X. Levander , Patrick Morrow
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2014/042389 WO 20140613
- International Announcement: WO2015/191088 WO 20151217
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/778 ; H01L29/20 ; H01L21/02 ; H01L21/78 ; H01L29/04 ; H01L29/205 ; H01L29/66
Abstract:
A method including forming a barrier layer on a polar compound semiconductor layer on a sacrificial substrate; coupling the sacrificial substrate to a carrier substrate to form a composite structure wherein the barrier layer is disposed between the polar compound semiconductor layer and the carrier substrate; separating the sacrificial substrate from the composite structure to expose the polar compound semiconductor layer; and forming at least one circuit device. An apparatus including a barrier layer on a substrate; a transistor device on the barrier layer; and a polar compound semiconductor layer disposed between the barrier layer and the transistor device, the polar compound semiconductor layer including a two-dimensional electron gas therein.
Public/Granted literature
- US20170077281A1 HIGH ELECTRON MOBILITY TRANSISTOR FABRICATION PROCESS ON REVERSE POLARIZED SUBSTRATE BY LAYER TRANSFER Public/Granted day:2017-03-16
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