Invention Grant
- Patent Title: Nonvolatile memory device, nonvolatile memory system including the same, and method of operating the same
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Application No.: US14477347Application Date: 2014-09-04
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Publication No.: US09941014B2Publication Date: 2018-04-10
- Inventor: ChulHo Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0000320 20140102
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G11C16/32 ; G11C11/56 ; G11C16/10

Abstract:
A nonvolatile memory device includes a memory cell array having a normal area and a temporary area. A page buffer stores data to be written to the normal area in a normal program operation and store a temporary data to be written to the temporary area in a temporary program operation. A control logic performs the normal program operation including a plurality of program loops. The control logic receives a suspend command before the normal program operation is completed and determines, in response to the suspend command, whether to complete the normal program operation or to suspend the normal operation and perform the temporary program operation based on a reference value representing a time for performing at least one program loop of the plurality of program loops.
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