Invention Grant
- Patent Title: Substrate treatment apparatus and substrate treatment method
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Application No.: US15056069Application Date: 2016-02-29
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Publication No.: US09953838B2Publication Date: 2018-04-24
- Inventor: Tatsunori Isogai
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-113200 20150603
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/67 ; H01L21/28 ; H01L21/268 ; H05B6/80 ; H01L21/3105
Abstract:
In accordance with an embodiment, a substrate treatment apparatus includes a housing, a magnetic field generating portion and a microwave supply portion. The housing is configured to contain a substrate comprising a conductive layer and an insulating film in contact with the conductive layer. The magnetic field generating portion is configured to generate a magnetic field which penetrates the substrate. The microwave supply portion is configured to generate a microwave to heat the substrate, to apply the microwave to the substrate provided in the magnetic field in such a manner that the microwave is absorbed by unpaired electrons at an interface between the conductive layer and the insulating film or in the insulating film.
Public/Granted literature
- US20160358780A1 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD Public/Granted day:2016-12-08
Information query
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