Invention Grant
- Patent Title: Methods, apparatus and system for self-aligned retrograde well doping for finFET devices
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Application No.: US15274974Application Date: 2016-09-23
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Publication No.: US09960086B2Publication Date: 2018-05-01
- Inventor: Mira Park , Kwan-Yong Lim , Steven Bentley , Amitabh Jain
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/82 ; H01L21/30 ; H01L21/8238 ; H01L21/311 ; H01L21/3065 ; H01L21/308 ; H01L21/223 ; H01L21/324
Abstract:
At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) having doping region self-aligned with a fin reveal position. A plurality of fins of a transistor is formed. A nitride cap layer on the plurality of fins is formed. An N-type doped region in a first portion of the plurality of fins. A P-type doped region in a second portion of the plurality of fins. A shallow trench isolation (STI) fill process for depositing an STI material on the plurality of fins. A fin reveal process for removing the STI material to a predetermined level. A cap strip process for removing the nitride cap layer for forming a fin reveal position that is self-aligned with the P-type and N-type doped regions.
Public/Granted literature
- US20180090391A1 METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPING FOR FINFET DEVICES Public/Granted day:2018-03-29
Information query
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