发明授权
- 专利标题： Method of manufacturing semiconductor device and substrate processing apparatus
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申请号： US14681065申请日： 2015-04-07
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公开(公告)号： US09966251B2公开(公告)日： 2018-05-08
- 发明人: Ryota Sasajima , Yoshiro Hirose , Yosuke Ota , Naonori Akae , Kojiro Yokozawa
- 申请人： Hitachi Kokusai Electric Inc.
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2009-265432 20091120; JP2010-215398 20100927
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/02 ; C23C16/54 ; C23C16/40 ; C23C16/455 ; C23C16/56 ; H01L21/314 ; H01L21/316 ; H01L21/3205 ; H01L21/321
摘要：
Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.
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