公开(公告)号：US09966252B2

公开(公告)日：2018-05-08

申请号：US14681067

申请日：2015-04-07

申请人： Hitachi Kokusai Electric Inc.

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/54 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

公开(公告)号：US09334567B2

公开(公告)日：2016-05-10

申请号：US14668702

申请日：2015-03-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshiro Hirose ,  Kenji Kanayama ,  Norikazu Mizuno ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/31 ,  C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/52 ,  H01L21/02 ,  C23C16/50

CPC分类号： C23C16/45527 ,  C23C16/30 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337

摘要： There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.

摘要翻译： 提供了一种用于制造半导体器件的方法，包括通过执行一次或多次循环在衬底上形成膜。 循环包括通过向衬底提供具有卤素基配体的第一硅烷基源并向衬底提供具有氨基的第二硅烷基源，从而形成含有硅，氮和碳的第一层。 该循环还包括通过将不同于每个源的反应性气体提供给衬底来修饰第一层来形成第二层。

公开(公告)号：US09269566B2

公开(公告)日：2016-02-23

申请号：US14661970

申请日：2015-03-18

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  C23C16/455 ,  H01L21/316 ,  H01L21/02 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.

公开(公告)号：US09011601B2

公开(公告)日：2015-04-21

申请号：US14329355

申请日：2014-07-11

申请人： Hitachi Kokusai Electric Inc.

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L21/02 ,  C23C16/455 ,  H01L49/00

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.

摘要翻译： 一种基板处理装置，其能够通过在基板上形成层来形成氧化膜，所述基板通过经由所述第一喷嘴将原料气体供给到容纳所述基板的处理容器中，同时通过第二喷嘴供给含氧气体， 含氢气体通过第一喷嘴进入处理容器，其内压低于大气压; 在所述处理容器内的非等离子体气氛中使所述含氧气体与所述含氢气体混合和反应以产生原子氧; 并且用原子氧氧化该层以将该层改变为氧化物层。

公开(公告)号：US08809204B2

公开(公告)日：2014-08-19

申请号：US13666272

申请日：2012-11-01

申请人： Hitachi Kokusai Electric, Inc.

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  C23C16/455 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate an atomic oxygen, and oxidizing the element-containing layer by the atomic oxygen.

摘要翻译： 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内部压力低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含有气体以产生原子氧，并且通过原子氧氧化含元素层。

公开(公告)号：US09966251B2

公开(公告)日：2018-05-08

申请号：US14681065

申请日：2015-04-07

申请人： Hitachi Kokusai Electric Inc.

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/54 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

公开(公告)号：US09761437B2

公开(公告)日：2017-09-12

申请号：US14803336

申请日：2015-07-20

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yosuke Ota ,  Yoshiro Hirose

IPC分类号： H01L21/465 ,  H01L21/02 ,  H01L21/314 ,  H01L21/365 ,  C23C16/52 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

CPC分类号： H01L21/02118 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0228

摘要： Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.

公开(公告)号：US09217199B2

公开(公告)日：2015-12-22

申请号：US14668563

申请日：2015-03-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshiro Hirose ,  Kenji Kanayama ,  Norikazu Mizuno ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/52 ,  C23C16/50

CPC分类号： C23C16/45527 ,  C23C16/30 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337

摘要： There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.

摘要翻译： 提供了一种基板处理装置，包括：被配置为容纳基板的处理室;被配置为将氯硅烷系源供给到处理室中的基板的第一源供给系统;第二源供给系统， 处理室中的基板和反应气体供应系统，被配置为将不同于每个源的反应性气体提供给处理室中的基板。 基板处理装置还包括控制器，其被配置为控制第一源供应系统，第二源供应系统和反应气体供应系统，使得通过交替过程执行在基板上形成绝缘膜的工艺。