A method for manufacturing a metal-insulator-metal (MIM) capacitor with a top electrode that is free of sidewall damage is provided. A bottom electrode layer is formed with a first material. An inter-electrode dielectric layer is formed over the bottom electrode layer. A top electrode layer is formed over the inter-electrode dielectric layer and without the first material. A first etch is performed into the top electrode layer and the inter-electrode dielectric layer to form a top electrode. A second etch into the bottom electrode layer to form a bottom electrode. The present application is also directed towards a MIM capacitor resulting from performing the method.