- 专利标题： Semiconductor device
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申请号： US15104073申请日： 2014-09-08
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公开(公告)号： US09972707B2公开(公告)日： 2018-05-15
- 发明人: Keisuke Kimura , Satoru Kameyama
- 申请人： Keisuke Kimura , Satoru Kameyama
- 申请人地址： JP Toyota
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Toyota
- 代理机构： Oliff PLC
- 优先权： JP2014-023867 20140210
- 国际申请： PCT/JP2014/073676 WO 20140908
- 国际公布： WO2015/118714 WO 20150813
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/861 ; H01L29/08 ; H01L29/06 ; H01L29/40
摘要：
A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.
公开/授权文献
- US20160372584A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-12-22
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