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    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160329323A1

    公开(公告)日：2016-11-10

    申请号：US15029583

    申请日：2014-07-17

    申请人： Shinya Iwasaki ,  Satoru Kameyama

    发明人： Shinya Iwasaki ,  Satoru Kameyama

    IPC分类号： H01L27/07 ,  H01L29/32 ,  H01L29/10 ,  H01L29/423 ,  H01L29/739 ,  H01L29/08

    CPC分类号： H01L27/0727 ,  H01L21/3223 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/4236 ,  H01L29/7397

    摘要： A small semiconductor device having a diode forward voltage less likely to change due to a gate potential is provided. An anode and an upper IGBT structure (emitter and body) are provided in a range in the substrate exposed at the upper surface. A trench, a gate insulating film, and a gate electrode extend along a border of the anode and the upper IGBT structure. Cathode and collector are provided in a range in the substrate exposed at the lower surface. A drift is provided between an upper structure and a lower structure. A crystal defect region extends across the drift above the cathode and the drift above the collector. When a thickness of the substrate is defined as x [μm] and a width of a portion of the crystal defect region that protrudes above the cathode is defined as y [μm], y≧0.007x2−1.09x+126 is satisfied.

    摘要翻译： 提供了具有由于栅极电位而不太可能改变的二极管正向电压的小型半导体器件。 阳极和上部IGBT结构（发射体和主体）设置在暴露在上表面的衬底的范围内。 沟槽，栅极绝缘膜和栅极电极沿着阳极和上部IGBT结构的边界延伸。 阴极和集电体设置在暴露在下表面的基板的范围内。 在上部结构和下部结构之间提供漂移。 晶体缺陷区域延伸穿过阴极上方的漂移物，并且在集电极上方漂移。 当衬底的厚度被定义为x [μm]，并且在阴极上方突出的晶体缺陷区域的一部分的宽度被定义为y [μm]时，满足y≥0.007x2-1.09x+ 126。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160247808A1

    公开(公告)日：2016-08-25

    申请号：US15027846

    申请日：2013-11-05

    申请人： Yuki HORIUCHI ,  Satoru KAMEYAMA

    发明人： Yuki HORIUCHI ,  Satoru KAMEYAMA

    IPC分类号： H01L27/105 ,  H01L29/08 ,  H01L29/739

    CPC分类号： H01L27/105 ,  H01L29/0696 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/407 ,  H01L29/7391 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/8613

    摘要： Provided is a technology for further reducing a loss in a semiconductor device including a semiconductor substrate in which an IGBT region and a diode region are provided. This semiconductor device includes a semiconductor substrate in which at least one IGBT region and at least one diode region are provided. The IGBT region and the diode region are adjacent to each other in a predetermined direction in a plan view of the semiconductor substrate. In the plan view of the semiconductor substrate, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate either in a direction from the cathode region toward the collector region or in a direction from the collector region toward the cathode region.

    摘要翻译： 提供了一种用于进一步减少包括其中设置有IGBT区域和二极管区域的半导体衬底的半导体器件的损耗的技术。 该半导体器件包括其中设置有至少一个IGBT区域和至少一个二极管区域的半导体衬底。 在半导体衬底的平面图中，IGBT区域和二极管区域在预定方向上彼此相邻。 在半导体衬底的平面图中，集电极区域和阴极区域相邻的第一边界面从半导体衬底的前表面侧的IGBT区域和二极管区域相邻的第二边界面偏移 在从阴极区域朝向集电极区域的方向或从集电极区域朝向阴极区域的方向上。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160005844A1

    公开(公告)日：2016-01-07

    申请号：US14767370

    申请日：2013-02-13

    申请人： Keisuke KIMURA ,  Satoru KAMEYAMA ,  Masaki KOYAMA ,  Sachiko AOI

    发明人： Keisuke KIMURA ,  Satoru KAMEYAMA ,  Masaki KOYAMA ,  Sachiko AOI

    IPC分类号： H01L29/739 ,  H01L27/06 ,  H01L29/10

    CPC分类号： H01L29/7397 ,  H01L27/0629 ,  H01L27/0664 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095

    摘要： A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

    摘要翻译： 公开了在一个半导体衬底上形成IGBT区域和二极管区域的半导体器件。 IGBT区域包括：形成在半导体衬底的前表面上的第一导电类型的主体层; 所述第一导电类型的体接触层部分地形成在所述主体层的前表面上，并且具有比所述主体层更高的第一导电类型的杂质浓度; 第二导电类型的发射极层，部分地形成在所述主体层的前表面上; 漂移层 收集层; 和栅电极。 在半导体器件中，与二极管区域长距离放置的身体接触层的一部分被制成大于放置在与二极管区域相距很短距离的身体接触层的一部分。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10141304B2

    公开(公告)日：2018-11-27

    申请号：US15029583

    申请日：2014-07-17

    申请人： Shinya Iwasaki ,  Satoru Kameyama

    发明人： Shinya Iwasaki ,  Satoru Kameyama

    IPC分类号： H01L29/66 ,  H01L27/07 ,  H01L29/32 ,  H01L29/739 ,  H01L21/322 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

    摘要： A small semiconductor device having a diode forward voltage less likely to change due to a gate potential is provided. An anode and an upper IGBT structure (emitter and body) are provided in a range in the substrate exposed at the upper surface. A trench, a gate insulating film, and a gate electrode extend along a border of the anode and the upper IGBT structure. Cathode and collector are provided in a range in the substrate exposed at the lower surface. A drift is provided between an upper structure and a lower structure. A crystal defect region extends across the drift above the cathode and the drift above the collector. When a thickness of the substrate is defined as x [μm] and a width of a portion of the crystal defect region that protrudes above the cathode is defined as y [μm], y≥0.007x2−1.09x+126 is satisfied.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09972707B2

    公开(公告)日：2018-05-15

    申请号：US15104073

    申请日：2014-09-08

    申请人： Keisuke Kimura ,  Satoru Kameyama

    发明人： Keisuke Kimura ,  Satoru Kameyama

    IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

    CPC分类号： H01L29/7397 ,  H01L29/0649 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/861

    摘要： A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09379225B2

    公开(公告)日：2016-06-28

    申请号：US14767370

    申请日：2013-02-13

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/06

    CPC分类号： H01L29/7397 ,  H01L27/0629 ,  H01L27/0664 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095

    摘要： A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

    摘要翻译： 公开了在一个半导体衬底上形成IGBT区域和二极管区域的半导体器件。 IGBT区域包括：形成在半导体衬底的前表面上的第一导电类型的主体层; 所述第一导电类型的体接触层部分地形成在所述主体层的前表面上，并且具有比所述主体层更高的第一导电类型的杂质浓度; 第二导电类型的发射极层，部分地形成在所述主体层的前表面上; 漂移层 收集层; 和栅电极。 在半导体器件中，与二极管区域长距离放置的身体接触层的一部分被制成大于放置在与二极管区域相距很短距离的身体接触层的一部分。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150295042A1

    公开(公告)日：2015-10-15

    申请号：US14443199

    申请日：2012-12-20

    申请人： Satoru KAMEYAMA ,  Keisuke KIMURA

    发明人： Satoru Kameyama ,  Keisuke Kimura

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/861 ,  H01L29/10 ,  H01L27/06 ,  H01L29/739

    CPC分类号： H01L29/0696 ,  H01L27/0629 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/861

    摘要： The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region includes: a collector layer; an IGBT drift layer; a body layer; a gate electrode; and an emitter layer. The diode region includes: a cathode layer; a diode drift layer; an anode layer; a trench electrode; and an anode contact layer. The diode region is divided into unit diode regions by the gate electrode or the trench electrode. In a unit diode region adjacent to the IGBT region, when seen in a plan view of the front surface of the semiconductor substrate, the anode layer and the anode contact layer are mixedly placed, and the anode contact layer is placed at least in a location opposite to the emitter layer with the gate electrode interposed therebetween.

    摘要翻译： 本申请公开了一种半导体器件，其中在一个半导体衬底上形成IGBT区域和二极管区域。 IGBT区域包括：集电极层; IGBT漂移层; 身体层 栅电极; 和发射极层。 二极管区域包括：阴极层; 二极管漂移层; 阳极层; 沟槽电极; 和阳极接触层。 二极管区域由栅极电极或沟槽电极分为单位二极管区域。 在与IGBT区域相邻的单位二极管区域中，当在半导体衬底的前表面的平面图中看到阳极层和阳极接触层时，将阳极接触层至少放置在位置 与发射极层相对，栅电极插在其间。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130075783A1

    公开(公告)日：2013-03-28

    申请号：US13618220

    申请日：2012-09-14

    申请人： Shinya YAMAZAKI ,  Satoru KAMEYAMA ,  Hitoshi SAKANE ,  Jyoji ITO

    发明人： Shinya YAMAZAKI ,  Satoru KAMEYAMA ,  Hitoshi SAKANE ,  Jyoji ITO

    IPC分类号： H01L21/265 ,  H01L29/739

    CPC分类号： H01L21/263 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861

    摘要： A semiconductor device includes: a semiconductor substrate, the semiconductor substrate comprising; an n type drift layer, a p type body layer on an upper surface side of the drift layer, and a high impurity n layer on a lower surface side of the drift layer. The high impurity n layer includes hydrogen ion donors as a dopant, and has a higher density of n type impurities than the drift layer. A lifetime control region including crystal defects as a lifetime killer is formed in the high impurity n layer and a part of the drift layer. A donor peak position is adjacent or identical to a defect peak position, at which a crystal defect density is highest in the lifetime control region in the depth direction of the semiconductor substrate. The crystal defect density in the defect peak position of the lifetime control region is 1×1012 atoms/cm3 or more.

    摘要翻译： 半导体器件包括：半导体衬底，所述半导体衬底包括： 漂移层的上表面侧的n型漂移层，p型体层以及漂移层的下表面侧的高杂质n层。 高杂质n层包括氢离子供体作为掺杂剂，并且具有比漂移层更高的n型杂质密度。 在高杂质n层和漂移层的一部分中形成包括晶体缺陷作为寿命抑制剂的寿命控制区域。 供体峰位置与半导体衬底的深度方向上的寿命控制区域中的晶体缺陷密度最高的缺陷峰位置相邻或相同。 寿命控制区的缺陷峰位置的晶体缺陷密度为1×1012原子/ cm3以上。