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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09153575B2

    公开(公告)日：2015-10-06

    申请号：US14373992

    申请日：2013-01-23

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06

    CPC分类号： H01L27/0664 ,  H01L29/0646 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

    摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

    摘要翻译： 当从上方观察半导体器件的半导体衬底时，隔离区域，IGBT区域和二极管区域都彼此相邻地形成。 在隔离区域中形成连接到体区和阳极区的深区。 在半导体衬底内部跨越隔离区域，IGBT区域和二极管区域形成漂移区域。 在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域，IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。 在二极管区域中，集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面，并且分隔隔离区域和二极管区域。 形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140361333A1

    公开(公告)日：2014-12-11

    申请号：US14373992

    申请日：2013-01-23

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L27/06 ,  H01L29/739 ,  H01L29/06

    CPC分类号： H01L27/0664 ,  H01L29/0646 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

    摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

    摘要翻译： 当从上方观察半导体器件的半导体衬底时，隔离区域，IGBT区域和二极管区域都彼此相邻地形成。 在隔离区域中形成连接到体区和阳极区的深区。 在半导体衬底内部跨越隔离区域，IGBT区域和二极管区域形成漂移区域。 在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域，IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。 在二极管区域中，集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面，并且分隔隔离区域和二极管区域。 形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09972707B2

    公开(公告)日：2018-05-15

    申请号：US15104073

    申请日：2014-09-08

    申请人： Keisuke Kimura ,  Satoru Kameyama

    发明人： Keisuke Kimura ,  Satoru Kameyama

    IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

    CPC分类号： H01L29/7397 ,  H01L29/0649 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/861

    摘要： A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09379225B2

    公开(公告)日：2016-06-28

    申请号：US14767370

    申请日：2013-02-13

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/06

    CPC分类号： H01L29/7397 ,  H01L27/0629 ,  H01L27/0664 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095

    摘要： A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

    摘要翻译： 公开了在一个半导体衬底上形成IGBT区域和二极管区域的半导体器件。 IGBT区域包括：形成在半导体衬底的前表面上的第一导电类型的主体层; 所述第一导电类型的体接触层部分地形成在所述主体层的前表面上，并且具有比所述主体层更高的第一导电类型的杂质浓度; 第二导电类型的发射极层，部分地形成在所述主体层的前表面上; 漂移层 收集层; 和栅电极。 在半导体器件中，与二极管区域长距离放置的身体接触层的一部分被制成大于放置在与二极管区域相距很短距离的身体接触层的一部分。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150295042A1

    公开(公告)日：2015-10-15

    申请号：US14443199

    申请日：2012-12-20

    申请人： Satoru KAMEYAMA ,  Keisuke KIMURA

    发明人： Satoru Kameyama ,  Keisuke Kimura

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/861 ,  H01L29/10 ,  H01L27/06 ,  H01L29/739

    CPC分类号： H01L29/0696 ,  H01L27/0629 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/861

    摘要： The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region includes: a collector layer; an IGBT drift layer; a body layer; a gate electrode; and an emitter layer. The diode region includes: a cathode layer; a diode drift layer; an anode layer; a trench electrode; and an anode contact layer. The diode region is divided into unit diode regions by the gate electrode or the trench electrode. In a unit diode region adjacent to the IGBT region, when seen in a plan view of the front surface of the semiconductor substrate, the anode layer and the anode contact layer are mixedly placed, and the anode contact layer is placed at least in a location opposite to the emitter layer with the gate electrode interposed therebetween.

    摘要翻译： 本申请公开了一种半导体器件，其中在一个半导体衬底上形成IGBT区域和二极管区域。 IGBT区域包括：集电极层; IGBT漂移层; 身体层 栅电极; 和发射极层。 二极管区域包括：阴极层; 二极管漂移层; 阳极层; 沟槽电极; 和阳极接触层。 二极管区域由栅极电极或沟槽电极分为单位二极管区域。 在与IGBT区域相邻的单位二极管区域中，当在半导体衬底的前表面的平面图中看到阳极层和阳极接触层时，将阳极接触层至少放置在位置 与发射极层相对，栅电极插在其间。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09312372B2

    公开(公告)日：2016-04-12

    申请号：US14766023

    申请日：2013-02-13

    申请人： Keisuke Kimura ,  Satoru Kameyama

    发明人： Keisuke Kimura ,  Satoru Kameyama

    IPC分类号： H01L29/73 ,  H01L29/739 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/7397 ,  H01L27/0727 ,  H01L27/0761 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095

    摘要： A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction.

    摘要翻译： 提出了在半导体衬底上形成至少包含IGBT区域的元件区域的半导体器件。 IGBT区域包括：集电极层; 漂移层 身体层 位于从所述半导体衬底的前表面延伸到所述漂移层的沟槽内的栅电极; 发射极层; 以及具有比体层更高的杂质浓度的接触层。 在半导体器件中，假设x方向是沟槽沿着半导体衬底的前表面延伸的方向，并且ay方向是沿着半导体衬底的前表面与x方向正交的方向，距离 沿x方向到发射极层的接触层大于在y方向上从接触层到沟槽的距离。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09041053B2

    公开(公告)日：2015-05-26

    申请号：US14373992

    申请日：2013-01-23

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06

    摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160329323A1

    公开(公告)日：2016-11-10

    申请号：US15029583

    申请日：2014-07-17

    申请人： Shinya Iwasaki ,  Satoru Kameyama

    发明人： Shinya Iwasaki ,  Satoru Kameyama

    IPC分类号： H01L27/07 ,  H01L29/32 ,  H01L29/10 ,  H01L29/423 ,  H01L29/739 ,  H01L29/08

    CPC分类号： H01L27/0727 ,  H01L21/3223 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/4236 ,  H01L29/7397

    摘要： A small semiconductor device having a diode forward voltage less likely to change due to a gate potential is provided. An anode and an upper IGBT structure (emitter and body) are provided in a range in the substrate exposed at the upper surface. A trench, a gate insulating film, and a gate electrode extend along a border of the anode and the upper IGBT structure. Cathode and collector are provided in a range in the substrate exposed at the lower surface. A drift is provided between an upper structure and a lower structure. A crystal defect region extends across the drift above the cathode and the drift above the collector. When a thickness of the substrate is defined as x [μm] and a width of a portion of the crystal defect region that protrudes above the cathode is defined as y [μm], y≧0.007x2−1.09x+126 is satisfied.

    摘要翻译： 提供了具有由于栅极电位而不太可能改变的二极管正向电压的小型半导体器件。 阳极和上部IGBT结构（发射体和主体）设置在暴露在上表面的衬底的范围内。 沟槽，栅极绝缘膜和栅极电极沿着阳极和上部IGBT结构的边界延伸。 阴极和集电体设置在暴露在下表面的基板的范围内。 在上部结构和下部结构之间提供漂移。 晶体缺陷区域延伸穿过阴极上方的漂移物，并且在集电极上方漂移。 当衬底的厚度被定义为x [μm]，并且在阴极上方突出的晶体缺陷区域的一部分的宽度被定义为y [μm]时，满足y≥0.007x2-1.09x+ 126。