Invention Grant
- Patent Title: On-chip randomness generation
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Application No.: US15421465Application Date: 2017-02-01
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Publication No.: US09985615B2Publication Date: 2018-05-29
- Inventor: Kai D. Feng , Ping-Chuan Wang , Zhijian Yang , Emmanuel Yashchin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly
- Main IPC: H03K3/84
- IPC: H03K3/84 ; H03K5/01 ; H03K3/012

Abstract:
An on-chip true noise generator including an embedded noise source with a low-voltage, high-noise zener diode(s), and an in-situ close-loop zener diode power control circuit. The present invention proposes the use of heavily doped polysilicon and silicon p-n diode(s) structures to minimize the breakdown voltage, increasing noise level and improving reliability. The present invention also proposes an in-situ close-loop zener diode control circuit to safe-guard the zener diode from catastrophic burn-out.
Public/Granted literature
- US20170141771A1 ON-CHIP RANDOMNESS GENERATION Public/Granted day:2017-05-18
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