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    ON-CHIP SEMICONDUCTOR DEVICE HAVING ENHANCED VARIABILITY
    6.
    发明申请
    ON-CHIP SEMICONDUCTOR DEVICE HAVING ENHANCED VARIABILITY 有权
    具有增强可变性的片上半导体器件

    公开(公告)号：US20160247770A1

    公开(公告)日：2016-08-25

    申请号：US15080650

    申请日：2016-03-25

    Applicant: International Business Machines Corporation

    Inventor： Wai-Kin Li ,  Chengwen Pei ,  Ping-Chuan Wang

    IPC: H01L23/00 ,  H01L29/423 ,  H01L27/02

    CPC classification number: H01L23/576 ,  H01L21/28158 ,  H01L21/823462 ,  H01L23/573 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/42368 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A physical unclonable function (PUF) semiconductor device includes a semiconductor substrate extending along a first direction to define a length and a second direction opposite the first direction to define a thickness. At least one pair of semiconductor structures is formed on the semiconductor substrate. The semiconductor structures include a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first gate dielectric layer having a first shape that defines a first threshold voltage. The second semiconductor structure includes a second gate dielectric layer having a second dielectric shape that is reversely arranged with respect to the first shape and that defines a second threshold voltage different from the first threshold voltage.

    Abstract translation: 物理不可克隆功能（PUF）半导体器件包括沿着第一方向延伸以限定长度的半导体衬底和与第一方向相反的第二方向以限定厚度。 在半导体衬底上形成至少一对半导体结构。 半导体结构包括第一半导体结构和第二半导体结构。 第一半导体结构包括具有限定第一阈值电压的第一形状的第一栅极电介质层。 第二半导体结构包括具有第二电介质形状的第二栅介质层，其相对于第一形状相反地布置并且限定不同于第一阈值电压的第二阈值电压。

    On-chip semiconductor device having enhanced variability
    7.
    发明授权
    On-chip semiconductor device having enhanced variability 有权
    具有增强的变化性的片上半导体器件

    公开(公告)号：US09391030B1

    公开(公告)日：2016-07-12

    申请号：US14625943

    申请日：2015-02-19

    Applicant: International Business machines Corporation

    Inventor： Wai-Kin Li ,  Chengwen Pei ,  Ping-Chuan Wang

    IPC: H01L21/302 ,  H01L23/00 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8236 ,  H01L21/28

    CPC classification number: H01L23/576 ,  H01L21/28158 ,  H01L21/823462 ,  H01L23/573 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/42368 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A physical unclonable function (PUF) semiconductor device includes a semiconductor substrate extending along a first direction to define a length and a second direction opposite the first direction to define a thickness. At least one pair of semiconductor structures is formed on the semiconductor substrate. The semiconductor structures include a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first gate dielectric layer having a first shape that defines a first threshold voltage. The second semiconductor structure includes a second gate dielectric layer having a second dielectric shape that is reversely arranged with respect to the first shape and that defines a second threshold voltage different from the first threshold voltage.

    Abstract translation: 物理不可克隆功能（PUF）半导体器件包括沿着第一方向延伸以限定长度的半导体衬底和与第一方向相反的第二方向以限定厚度。 在半导体衬底上形成至少一对半导体结构。 半导体结构包括第一半导体结构和第二半导体结构。 第一半导体结构包括具有限定第一阈值电压的第一形状的第一栅极电介质层。 第二半导体结构包括具有第二电介质形状的第二栅介质层，其相对于第一形状相反地布置并且限定不同于第一阈值电压的第二阈值电压。

    E-fuse with hybrid metallization
    8.
    发明授权
    E-fuse with hybrid metallization 有权
    电子熔断器采用混合金属化

    公开(公告)号：US09305879B2

    公开(公告)日：2016-04-05

    申请号：US14024694

    申请日：2013-09-12

    Applicant: International Business Machines Corporation

    Inventor： Ronald G. Filippi ,  Erdem Kaltalioglu ,  Andrew T. Kim ,  Ping-Chuan Wang ,  Lijuan Zhang

    IPC: H01L23/525 ,  H01L21/768 ,  H01L23/532

    CPC classification number: H01L23/5256 ,  H01L21/76886 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An e-fuse structure including a fuse link having a first region made of a first conductor and a second region made of a second conductor. The first conductor and the second conductor are in the same wiring level. The first conductor has a higher electrical resistance than the second conductor. The first conductor has a higher resistance to electromigration than the second conductor. The first region and the second region have a common width. The length of the first region is longer than the length of the second region.

    Abstract translation: 一种电熔丝结构，包括具有由第一导体制成的第一区域和由第二导体制成的第二区域的熔丝连接。 第一导体和第二导体处于相同的布线层。 第一导体具有比第二导体更高的电阻。 第一导体比第二导体具有更高的电迁移阻力。 第一区域和第二区域具有共同的宽度。 第一区域的长度比第二区域的长度长。

    On-chip structure for security application
    9.
    发明授权
    On-chip structure for security application 有权
    用于安全应用的片上结构

    公开(公告)号：US09189654B2

    公开(公告)日：2015-11-17

    申请号：US14096345

    申请日：2013-12-04

    Applicant: International Business Machines Corporation

    Inventor： Kai Di Feng ,  Wai-Kin Li ,  Chengwen Pei ,  Ping-Chuan Wang

    IPC: G06F21/71 ,  G06F7/58

    CPC classification number: G06F21/71 ,  G06F7/588 ,  G06F21/73

    Abstract: A set of physical unclonable function (PUF) cells is configured with a set of capacitive devices in an integrated circuit (IC). A subset of PUF cells includes a corresponding subset of capacitive devices that have failed during fabrication. A charging current sufficient to charge an operational capacitive device in a PUF cell is sent to the set of PUF cells. A determination is made whether an output voltage of a PUF cell exceeds a threshold. When the output voltage exceeding the threshold, a logic value of 1 is produced at a position in a bit-string. The determination and the producing is repeated for each PUF cell in the set to output a bit-string, which includes 1s and 0s in random positions. The bit-string is used in a security application as a random stable value owing to a random pattern of 1s and 0s present in the bit-string.

    Abstract translation: 一组物理不可克隆功能（PUF）单元在集成电路（IC）中配置有一组电容性器件。 PUF单元的子集包括在制造期间失败的电容器件的相应子集。 向PUF单元中的操作电容性装置充电的充电电流被发送到PUF单元组。 确定PUF单元的输出电压是否超过阈值。 当输出电压超过阈值时，在位串中的位置产生逻辑值1。 对集合中的每个PUF单元重复确定和产生，以输出位串，其包括随机位置中的1和0。 由于位串中存在1和0的随机模式，因此位串在安全应用程序中用作随机稳定值。

    PHOTORESIST COLLAPSE METHOD FOR FORMING A PHYSICAL UNCLONABLE FUNCTION
    10.
    发明申请
    PHOTORESIST COLLAPSE METHOD FOR FORMING A PHYSICAL UNCLONABLE FUNCTION 有权
    用于形成物理不可靠函数的光电聚焦方法

    公开(公告)号：US20150235964A1

    公开(公告)日：2015-08-20

    申请号：US14181960

    申请日：2014-02-17

    Applicant: International Business Machines Corporation

    Inventor： Kai D. Feng ,  Wai-Kin Li ,  Ping-Chuan Wang ,  Zhijian Yang

    IPC: H01L23/544 ,  H01L21/3105

    CPC classification number: H01L21/32139 ,  G09C1/00 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76885 ,  H01L22/34 ,  H01L23/522 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/5386 ,  H01L23/544 ,  H01L23/57 ,  H01L2223/54433 ,  H01L2223/5444 ,  H01L2223/5448 ,  H01L2224/05097 ,  H04L9/3278 ,  H04L2209/12

    Abstract: An organic material layer is lithographically patterned to include a linear array portion of lines and spaces. In one embodiment, the organic material layer can be an organic planarization layer that is patterned employing a photoresist layer, which is consumed during patterning of the organic planarization layer. Volume expansion of the organic planarization layer upon exposure to a halogen-including gas causes portions of the linear array to collapse at random locations. In another embodiment, the height of the photoresist layer is selected such that the linear array portion of the photoresist layer is mechanically unstable and produces random photoresist collapses. The pattern including random modifications due to the collapse of the organic material layer is transferred into an underlying layer to generate an array of conductive material lines with random electrical disruption of shorts or opens. The structure with random shorts can be employed as a physical unclonable function.

    Abstract translation: 有机材料层被光刻图案化以包括线和空间的直线阵列部分。 在一个实施例中，有机材料层可以是利用在有机平坦化层的图案化期间消耗的光致抗蚀剂层进行图案化的有机平坦化层。 有机平面化层在暴露于含卤素气体时的体积膨胀导致线性阵列的部分在随机位置崩溃。 在另一个实施方案中，选择光致抗蚀剂层的高度，使得光致抗蚀剂层的线性阵列部分在机械上不稳定并产生随机光刻胶塌陷。 由于有机材料层的崩溃引起的包括随机修饰的图案被转移到下层中，以产生具有短路或开放的随机电气中断的导电材料线的阵列。 具有随机短路的结构可用作物理不可克隆功能。

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