- 专利标题: Semiconductor apparatus
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申请号: US15813939申请日: 2017-11-15
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公开(公告)号: US09991882B2公开(公告)日: 2018-06-05
- 发明人: Hajime Ohmi , Osamu Uno , Masahiro Iwamoto , Yuichi Itonaga
- 申请人: SOCIONEXT INC.
- 申请人地址: JP Yokohama
- 专利权人: SOCIONEXT INC.
- 当前专利权人: SOCIONEXT INC.
- 当前专利权人地址: JP Yokohama
- 代理机构: Arent Fox LLP
- 优先权: JP2014-144226 20140714
- 主分类号: H03K17/081
- IPC分类号: H03K17/081 ; H03K9/04 ; H03K19/0185 ; H03K19/003
摘要:
A semiconductor apparatus includes an internal circuit connected to a first power line to which a first power voltage is applied; a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied; and a voltage control circuit, which is connected to the node, generating the control voltage. Further, the voltage control circuit includes a step-down circuit generating an internal voltage by lowering the input voltage applied to the node, and a switching circuit, which is connected to the first power line, generating the control voltage based on the first power voltage and the internal voltage.
公开/授权文献
- US20180076809A1 SEMICONDUCTOR APPARATUS 公开/授权日:2018-03-15
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