公开(公告)号：US20180076809A1

公开(公告)日：2018-03-15

申请号：US15813939

申请日：2017-11-15

申请人： SOCIONEXT INC.

发明人： Hajime OHMI ,  Osamu Uno ,  Masahiro Iwamoto ,  Yuichi Itonaga

IPC分类号： H03K17/081 ,  H03K19/0185 ,  H03K19/003

CPC分类号： H03K17/08104 ,  H03K19/00315 ,  H03K19/018521 ,  H03K19/018592

摘要： A semiconductor apparatus includes an internal circuit connected to a first power line to which a first power voltage is applied; a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied; and a voltage control circuit, which is connected to the node, generating the control voltage. Further, the voltage control circuit includes a step-down circuit generating an internal voltage by lowering the input voltage applied to the node, and a switching circuit, which is connected to the first power line, generating the control voltage based on the first power voltage and the internal voltage.

公开(公告)号：US09991882B2

公开(公告)日：2018-06-05

申请号：US15813939

申请日：2017-11-15

申请人： SOCIONEXT INC.

发明人： Hajime Ohmi ,  Osamu Uno ,  Masahiro Iwamoto ,  Yuichi Itonaga

IPC分类号： H03K17/081 ,  H03K9/04 ,  H03K19/0185 ,  H03K19/003

CPC分类号： H03K17/08104 ,  H03K19/00315 ,  H03K19/018521 ,  H03K19/018592

摘要： A semiconductor apparatus includes an internal circuit connected to a first power line to which a first power voltage is applied; a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied; and a voltage control circuit, which is connected to the node, generating the control voltage. Further, the voltage control circuit includes a step-down circuit generating an internal voltage by lowering the input voltage applied to the node, and a switching circuit, which is connected to the first power line, generating the control voltage based on the first power voltage and the internal voltage.

公开(公告)号：US09853636B2

公开(公告)日：2017-12-26

申请号：US14741911

申请日：2015-06-17

申请人： SOCIONEXT INC.

发明人： Hajime Ohmi ,  Osamu Uno ,  Masahiro Iwamoto ,  Yuichi Itonaga

IPC分类号： H03K17/081 ,  H03K19/003 ,  H03K19/0185

CPC分类号： H03K17/08104 ,  H03K19/00315 ,  H03K19/018521 ,  H03K19/018592

摘要： A semiconductor apparatus includes an internal circuit connected to a first power line to which a first power voltage is applied; a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied; and a voltage control circuit, which is connected to the node, generating the control voltage. Further, the voltage control circuit includes a step-down circuit generating an internal voltage by lowering the input voltage applied to the node, and a switching circuit, which is connected to the first power line, generating the control voltage based on the first power voltage and the internal voltage.