- 专利标题: Method of manufacturing semiconductor package
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申请号: US15094125申请日: 2016-04-08
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公开(公告)号: US09997477B2公开(公告)日: 2018-06-12
- 发明人: Tsung-Hsien Tsai , Heng-Cheng Chu , Chien-Cheng Lin , Chih-Hsien Chiu , Hsin-Lung Chung , Yude Chu
- 申请人: Siliconware Precision Industries Co., Ltd.
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 代理机构: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- 代理商 Peter F. Corless; Steven M. Jensen
- 优先权: TW102102301A 20130122
- 主分类号: H01L23/66
- IPC分类号: H01L23/66 ; H01L49/02 ; H01L23/64 ; H01L23/00 ; H01L25/16 ; H01L25/00 ; H01L21/56 ; H01L23/31
摘要:
A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes: a substrate having a plurality of conductive lands and a plurality of bonding pads surrounding the conductive lands formed on a surface thereof; a plurality of passive devices mounted on the conductive lands; an insulation layer formed on the surface and having a portion of the passive devices embedded therein; a semiconductor chip mounted on a top surface of the insulation layer; a plurality of bonding wires electrically connecting the semiconductor chip and the bonding pads; an encapsulant formed on the surface of the substrate to encapsulate the insulation layer, the bonding wires and the semiconductor chip, wherein a region of the semiconductor chip projected onto the substrate covers a portion of an outermost one of the passive devices. Therefore, the mounting density of the passive devices is improved.
公开/授权文献
- US20160225728A1 METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE 公开/授权日:2016-08-04
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