Invention Application
- Patent Title: PERSISTENT P-TYPE GROUP II-VI SEMICONDUCTORS
- Patent Title (中): PERSICTE P-II组II-VI半导体
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Application No.: PCT/US2005021317Application Date: 2005-06-17
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Publication No.: WO2006009782A3Publication Date: 2007-05-31
- Inventor: BURGENER II ROBERT H , FELIX ROGER L , RENLUND GARY M
- Applicant: ON INTERNATIONAL INC , BURGENER II ROBERT H , FELIX ROGER L , RENLUND GARY M
- Assignee: ON INTERNATIONAL INC,BURGENER II ROBERT H,FELIX ROGER L,RENLUND GARY M
- Current Assignee: ON INTERNATIONAL INC,BURGENER II ROBERT H,FELIX ROGER L,RENLUND GARY M
- Priority: US58045404 2004-06-17
- Main IPC: H01L29/12
- IPC: H01L29/12 ; C01G9/02 ; H01L21/00 ; H01L21/20 ; H01L21/28 ; H01L21/31 ; H01L21/3115 ; H01L21/316 ; H01L21/363 ; H01L21/365 ; H01L21/469 ; H01L23/58 ; H01L27/15 ; H01L29/225 ; H01L29/26 ; H01L31/0296 ; H01L31/0328 ; H01L31/12 ; H01L33/28 ; H01S5/30 ; H01S5/327 ; H01S5/347
Abstract:
A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.
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