Invention Application
- Patent Title: BIT-REPLACEMENT TECHNIQUE FOR DRAM ERROR CORRECTION
- Patent Title (中): DRAM误差校正的位置更换技术
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Application No.: PCT/US2010056217Application Date: 2010-11-10
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Publication No.: WO2011062825A2Publication Date: 2011-05-26
- Inventor: WARE FREDERICK A , TSERN ELY , VOGELSANG THOMAS
- Applicant: RAMBUS INC , WARE FREDERICK A , TSERN ELY , VOGELSANG THOMAS
- Assignee: RAMBUS INC,WARE FREDERICK A,TSERN ELY,VOGELSANG THOMAS
- Current Assignee: RAMBUS INC,WARE FREDERICK A,TSERN ELY,VOGELSANG THOMAS
- Priority: US26308009 2009-11-20
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G06F11/10 ; G11C11/40 ; G11C29/18
Abstract:
The disclosed embodiments provide a dynamic memory device, comprising a set of dynamic memory cells and a set of replacement dynamic memory cells. The set of replacement dynamic memory cells includes data cells which contain replacement data bits for predetermined faulty cells in the set of dynamic memory cells, and address cells which contain address bits identifying the faulty cells, wherein each data cell is associated with a group of address cells that identify an associated faulty cell in the set of dynamic memory cells. The dynamic memory device also includes a remapping circuit, which remaps a faulty cell in the set of dynamic memory cells to an associated replacement cell in the set of replacement cells.
Information query