Invention Application
WO2011062825A2 BIT-REPLACEMENT TECHNIQUE FOR DRAM ERROR CORRECTION 审中-公开
DRAM误差校正的位置更换技术

BIT-REPLACEMENT TECHNIQUE FOR DRAM ERROR CORRECTION
Abstract:
The disclosed embodiments provide a dynamic memory device, comprising a set of dynamic memory cells and a set of replacement dynamic memory cells. The set of replacement dynamic memory cells includes data cells which contain replacement data bits for predetermined faulty cells in the set of dynamic memory cells, and address cells which contain address bits identifying the faulty cells, wherein each data cell is associated with a group of address cells that identify an associated faulty cell in the set of dynamic memory cells. The dynamic memory device also includes a remapping circuit, which remaps a faulty cell in the set of dynamic memory cells to an associated replacement cell in the set of replacement cells.
Patent Agency Ranking
0/0