Invention Application
- Patent Title: VAPOR PHASE PHOTORESISTS DEPOSITION
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Application No.: PCT/US2021/038978Application Date: 2021-06-24
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Publication No.: WO2022005877A8Publication Date: 2022-01-06
- Inventor: KALUTARAGE, Lakmal, Charidu , DANGERFIELD, Aaron , SALY, Mark, Joseph , THOMPSON, David, Michael , SINGHA ROY, Susmit , FREED, Regina
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue
- Agency: BERNADICOU, Michael, A. et al.
- Priority: US17/351,096 2021-06-17
- Main IPC: G03F7/16
- IPC: G03F7/16 ; G03F7/004 ; C23C16/455 ; C23C16/30 ; C23C16/40 ; C23C16/45536 ; C23C16/45538 ; G03F7/0042 ; G03F7/0043 ; G03F7/167 ; G03F7/168
Abstract:
Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.
Public/Granted literature
- WO2022005877A1 VAPOR PHASE PHOTORESISTS DEPOSITION Public/Granted day:2022-01-06
Information query
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