公开(公告)号：WO2021144108A1

公开(公告)日：2021-07-22

申请号：PCT/EP2020/086442

申请日：2020-12-16

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAL, Paulus, Albertus ,  KOEVOETS, Adrianus, Hendrik ,  SEOANE DE LA CUESTA, Beatriz

IPC: G03F7/16 ,  G03F7/20 ,  G03F7/167 ,  G03F7/707 ,  G03F7/70783 ,  G03F7/7095

Abstract: The present invention relates to a substrate with a backside surface configured to provide a friction switch when the substrate is loaded onto a substrate holder in a substrate-loading cycle, wherein said substrate backside surface comprises a molecular assembly comprising at least one high-interaction region and at least one low-interaction region. The invention further relates to methods using such a substrate and to methods for creating such a substrate.

公开(公告)号：WO2022010809A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040381

申请日：2021-07-02

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha S.H. ,  ALVI, Mohammed Haroon ,  WISE, Richard ,  PAN, Yang ,  GOTTSCHO, Richard A. ,  LAVOIE, Adrien ,  KANAKASABAPATHY, Sivananda Krishnan ,  WEIDMAN, Timothy William ,  LIN, Qinghuang ,  HUBACEK, Jerome

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67 ,  C23C16/00 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/168 ,  H01L21/67167 ,  H01L21/67207

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：WO2022005877A8

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA ROY, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2022005877A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA, Roy, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2021262371A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/034019

申请日：2021-05-25

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  LI, Da ,  LEE, Younghee ,  TAN, Samantha SiamHwa ,  JENSEN, Alan J. ,  XUE, Jun ,  MANUMPIL, Mary Anne

IPC: H01L21/033 ,  G03F7/11 ,  H01L21/67 ,  H01J37/32 ,  G03F7/0042 ,  G03F7/094 ,  G03F7/16 ,  G03F7/167 ,  H01L21/67207 ,  H01L21/68 ,  H01L29/66227

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.