公开(公告)号：EP2396703A1

公开(公告)日：2011-12-21

申请号：EP09785860.9

申请日：2009-03-30

申请人： AZ Electronic Materials USA Corp.

发明人： ABDALLAH, David, J. ,  DAMMEL, Ralph, R. ,  TAKANO, Yusuke ,  LI, Jin ,  KUROSAWA, Kazunori

IPC分类号： G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213

CPC分类号： G03F7/40 ,  H01L21/02123 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/3125 ,  Y10T428/24802

摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

公开(公告)号：EP2233977A8

公开(公告)日：2010-11-03

申请号：EP08861766.7

申请日：2008-12-10

申请人： AZ Electronic Materials USA Corp.

发明人： AKIYAMA, Yasushi ,  NOYA, Go ,  KURAMOTO, Katsutoshi ,  TAKANO, Yusuke

IPC分类号： G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091 ,  G03F7/0046

摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R 1 , R 2 , R 3 , and R 4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X - represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount. [General formula (1)]

摘要翻译： 公开了一种用于形成顶部抗反射膜的组合物，其包含至少一种含氟化合物和由式（1）表示的季铵化合物[其中R 1，R 2，R 3和R 4中的至少一个表示羟基 或烷醇基，其它独立地表示氢或具有1至10个碳原子的烷基; X-代表羟基，卤素离子或硫酸根离子]和任选的水溶性聚合物，酸，表面活性剂和水性溶剂。 用于形成顶部抗反射膜的组合物可以表现出与当以较小量使用时的常规顶部抗反射膜形成组合物相同的功能水平。 [通式（1）]

公开(公告)号：EP2146250A8

公开(公告)日：2010-03-03

申请号：EP08752271.0

申请日：2008-05-01

申请人： AZ Electronic Materials USA Corp.

发明人： HONG, Sung-Eun ,  TAKANO, Yusuke ,  KANG, Wen-Bing

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： H01L21/0271 ,  G03F7/40 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088

摘要： A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3), modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.

公开(公告)号：EP2233977B1

公开(公告)日：2012-07-11

申请号：EP08861766.7

申请日：2008-12-10

申请人： AZ Electronic Materials USA Corp.

发明人： AKIYAMA, Yasushi ,  NOYA, Go ,  KURAMOTO, Katsutoshi ,  TAKANO, Yusuke

IPC分类号： G03F7/11 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004

CPC分类号： G03F7/091 ,  G03F7/0046

摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorinated compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3 and R4 represents a hydroxy group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X- represents a hydroxy group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levelsof functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount. [General formula (1)]

公开(公告)号：EP2244127A1

公开(公告)日：2010-10-27

申请号：EP09706606.2

申请日：2009-01-27

申请人： AZ Electronic Materials (Japan) K.K. ,  AZ Electronic Materials USA Corp.

发明人： TAKANO, Yusuke ,  LI, Jin ,  ISHIKAWA, Tomonori ,  NOYA, Go

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： H01L21/0337 ,  C09D183/14 ,  C09D183/16 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0338 ,  H01L21/31144 ,  Y10T428/24479

摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.
The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

摘要翻译： 提供了一种用于形成超精细图案，其可以简单地产生具有高批量生产超精细图案的方法。 该方法包括形成第一凸起图案，上的膜的步骤，以进行处理，从而形成形成的隔离物的上构成第一凸起图案的凸部的侧壁的树脂组合物，以及使用作为超精细图案含有硅氮烷- 掩模间隔物或周围的隔离物设置在树脂层。 所述间隔件通过仅在其周围的第一凸起图案部分在均匀涂布树脂组合物固化而形成。 。根据此方法，用于图案形成，与传统的方法中，一个超精细图案可以形成。

公开(公告)号：EP2233978A1

公开(公告)日：2010-09-29

申请号：EP08863406.8

申请日：2008-12-12

申请人： AZ Electronic Materials (Japan) K.K. ,  AZ Electronic Materials USA Corp.

发明人： NOYA, Go ,  AKIYAMA, Yasushi ,  TAKANO, Yusuke

IPC分类号： G03F7/11 ,  C08F216/06 ,  C08F220/10 ,  C08F226/10 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08F220/06 ,  C08F2220/1891 ,  G03F7/11

摘要： The present invention provides a composition for forming a top anti-reflection coating having a low refractive index, realizing a gradual swing curve and giving a small swing ratio. This composition comprises a solvent and an anthracene skeleton-containing polymer having a hydrophilic group. The composition forms an anti-reflection coating on a photoresist film, and can be used in a photolithographic process for forming a pattern by use of light having a wavelength of 160 to 260 nm.

公开(公告)号：EP2233977A1

公开(公告)日：2010-09-29

申请号：EP08861766.7

申请日：2008-12-10

申请人： AZ Electronic Materials (Japan) K.K. ,  AZ Electronic Materials USA Corp.

发明人： AKIYAMA, Yasushi ,  NOYA, Go ,  KURAMOTO, Katsutoshi ,  TAKANO, Yusuke

IPC分类号： G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091 ,  G03F7/0046

摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R 1 , R 2 , R 3 , and R 4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X - represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount. [General formula (1)]

摘要翻译： 公开了一种用于形成顶层抗反射膜，电影，其包含至少一种含氟化合物和由式（1）[worin R 1，R 2，R 3中的至少一个，和R 4表示的季铵化合物的组合物 表示羟基或链烷醇基，其余的独立地为氢或具有上1至10个碳原子的烷基; 和X - darstellt羟基，卤离子或硫酸根离子]，和任选地一种水溶性聚合物，溶剂，酸，表面活性剂和在wässrige。 用于形成顶层抗反射组合物薄膜可以表现出的功能相同的水平与常规顶层抗反射膜形成组合物的当在一个较小的量施用。 [通式（1）]

公开(公告)号：EP2584593A2

公开(公告)日：2013-04-24

申请号：EP11795255.6

申请日：2011-08-10

申请人： AZ Electronic Materials USA Corp.

发明人： SHINDE, Ninad ,  NAGAHARA, Tatsuro ,  TAKANO, Yusuke

IPC分类号： H01L21/318

CPC分类号： H01L21/0214 ,  B05D3/065 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/14 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348

摘要： The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150°C.

摘要翻译： 本发明提供了一种能够减少能量成本的氮氧化硅膜形成方法，并因此提供配备有氮氧化硅膜，由此形成一个基片。 该方法包括以下步骤：铸造可成膜涂料组合物，含在衬底表面上的聚硅氮烷化合物，以形成涂层; 干燥该涂层以除去过量的在其中的溶剂; 然后用UV光照射所述干涂层在温度低于150℃。

公开(公告)号：EP2233978A8

公开(公告)日：2010-11-03

申请号：EP08863406.8

申请日：2008-12-12

申请人： AZ Electronic Materials USA Corp.

发明人： NOYA, Go ,  AKIYAMA, Yasushi ,  TAKANO, Yusuke

IPC分类号： G03F7/11 ,  C08F216/06 ,  C08F220/10 ,  C08F226/10 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08F220/06 ,  C08F2220/1891 ,  G03F7/11

摘要： The present invention provides a composition for forming a top anti-reflection coating having a low refractive index, realizing a gradual swing curve and giving a small swing ratio. This composition comprises a solvent and an anthracene skeleton-containing polymer having a hydrophilic group. The composition forms an anti-reflection coating on a photoresist film, and can be used in a photolithographic process for forming a pattern by use of light having a wavelength of 160 to 260 nm.

公开(公告)号：EP2146250A1

公开(公告)日：2010-01-20

申请号：EP08752271.0

申请日：2008-05-01

申请人： AZ Electronic Materials (Japan) K.K. ,  AZ Electronic Materials USA Corp.

发明人： HONG, Sung-Eun ,  TAKANO, Yusuke ,  KANG, Wen-Bing

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： H01L21/0271 ,  G03F7/40 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088

摘要： A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3), modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.