公开(公告)号：EP1162856A3

公开(公告)日：2004-09-15

申请号：EP01100986.7

申请日：2001-01-17

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Wang, Shih-Yuan

IPC分类号： H04Q11/00

CPC分类号： H04Q11/0005 ,  H04Q2011/0026

摘要： A cross-connect switch[100] for switching light signals arriving on N input optical fibers[110] to M out optical fibers[140]. The switch includes NxM mirror elements[121, 123] arranged as N rows and M columns of mirror elements[121, 123]. Each mirror element has a reflecting state and a non-reflecting state. In the reflecting state, each mirror element reflects light from a corresponding one of the input optical fibers[110] to a corresponding one of the out optical fibers[140]. Each mirror element is positioned in the non-reflecting state such that the mirror element does not intercept light from any of the input optical fibers[110]. All of the mirror elements[121, 123] corresponding to a given input optical fiber are located on the same row and all mirror elements[121, 123] corresponding to a given output optical fiber are located in the same column. The switch also includes a plurality of re-collimating lenses[131, 132], one such re-collimating lens[131] is located between two of the mirror elements[121, 123] in each of the rows of mirror elements[121, 123]. Each re-collimating lens collimates light from the input optical fiber[110] corresponding to that row. The switch also includes one such re-collimating lens[132] between two of the mirror elements[121, 123] in each of the columns of mirror elements[121, 123].

公开(公告)号：EP1091231A3

公开(公告)日：2004-05-26

申请号：EP00117160.2

申请日：2000-08-10

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Wang, Shih-Yuan

IPC分类号： G02B6/35

CPC分类号： G02B6/3504 ,  G02B6/29317 ,  G02B6/3506 ,  G02B6/3512 ,  G02B6/3534 ,  G02B6/3546 ,  G02B6/3596

摘要： An improved optical switch (10) includes a movable optical switching element (15) configured to selectively direct optical signals (13) traveling in an optical input path (11) to one of at least two optical output paths (12, 16). The movable optical switching element (15, 35) may include waveguide portions (18) and/or mirrors (58) to direct the optical signals. In an alternative embodiment, the moveable optical switching element (75) may include waveguide grating couplers (128) to allow the selective reflection of a particular wavelength of light from an optical waveguide (121) carrying a number of such of optical wavelengths (123).

公开(公告)号：EP1081538A3

公开(公告)日：2003-08-13

申请号：EP00114523.4

申请日：2000-07-06

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Corzine, Scott W. ,  Wang, Shih-Yuan

IPC分类号： G02F1/19 ,  G02F1/315 ,  G02F1/21 ,  G11C13/04

CPC分类号： G11C13/041 ,  G02F1/19 ,  G02F1/21 ,  G02F1/315 ,  G02F2203/02 ,  G02F2203/023

摘要： An optical element having a variable index of refraction. The optical element utilizes a layer of a transparent dielectric material having an index of refraction determined by the concentration of hydrogen in the dielectric material. A layer of a hydrogen reservoir medium that includes a material that acts as a source or a sink for hydrogen is placed adjacent to the transparent dielectric layer. The reservoir medium accepts hydrogen from the transparent layer in response to a first electric field being applied across the transparent layer and reservoir layer and donates hydrogen to the transparent layer in response to a second electric field being applied across the transparent layer and the reservoir layer. The electric fields are generated by applying appropriate potentials across first and second electrodes that sandwich the dielectric and reservoir layers. The preferred reservoir material is KOH. The transparent dielectric material preferably includes a material chosen from the group consisting of hydrides of an alkali, alkaline-earth, rare-earth metals, and alloys thereof.

公开(公告)号：EP1037344A1

公开(公告)日：2000-09-20

申请号：EP00102446.2

申请日：2000-02-04

申请人： Agilent Technologies Inc

发明人： Wang, Shih-Yuan ,  Chen, Yong

IPC分类号： H01S5/323 ,  H01S5/24

CPC分类号： B82Y20/00 ,  H01S5/2232 ,  H01S5/227 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00 ,  H01S2304/04 ,  H01S2304/12

摘要： A laser diode[200] that is constructed in a trench[216] in a manner such that the material in the trench[216] acts as a waveguide. The laser diode[200] includes a first contact layer[214] constructed from a first semiconducting material of a first carrier type, the first semiconducting material having a first index of refraction. The first contact layer[214] has a trench[216] therein. The trench[216] has a layer of a second semiconducting material of the first carrier type on the bottom surface. The index of refraction of the second semiconducting material is at least one percent greater than the index of refraction of the first semiconducting material. The laser also includes a first dielectric layer[215] covering the first layer in those regions outside of the trench[216] and a first cladding layer[221] constructed from a third semiconducting material of the first carrier type. The first cladding layer[221] overlies the dielectric layer. An active layer[222] overlies the first cladding layer[221]. A second cladding layer[223] constructed from a fourth semiconducting material of the opposite carrier type from the first carrier type overlies the active layer[222]. A second contact layer[224] of a fifth semiconducting material of the opposite carrier type from the first carrier type overlies the second cladding layer[223]. The invention is particularly well suited for constructing laser diodes based on group III-V material systems such as GaN.

摘要翻译： 激光二极管Ä200Ü，其以沟槽Ä216Ü构造，使得沟槽中的材料作为波导。 激光二极管200包括由第一载体类型的第一半导体材料构成的第一接触层Ä214，第一半导体材料具有第一折射率。 第一接触层Ä214Ü在其中具有Ф216Ü。 沟槽2101在底面具有第一载体类型的第二半导体材料层。 第二半导体材料的折射率比第一半导体材料的折射率大至少一个百分点。 该激光器还包括覆盖在沟槽外部区域中的那些区域中的第一层的第一介电层Ä215Ü以及由第一载流子类型的第三半导体材料构成的第一覆层Y. 第一覆层层221a覆盖在介电层上。 活性层Ä222Ü覆盖在第一包层2222上。 由与第一载体类型相反的载体类型的第四半导体材料构成的第二覆层21a22u覆盖有源层2322。 与第一载体类型相反的载体类型的第五半导体材料的第二接触层2324u覆盖在第二覆层2322上。 本发明特别适用于构建基于III-V族材料系统如GaN的激光二极管。

公开(公告)号：EP1037341A2

公开(公告)日：2000-09-20

申请号：EP00102463.7

申请日：2000-02-04

申请人： Agilent Technologies Inc

发明人： Tan, Michael R. T. ,  Babic, Dubravko I. ,  Corzine, Scott W. ,  Ranganath, Tirmula R. ,  Wang, Shih-Yuan ,  Bi, Wayne

IPC分类号： H01S5/04 ,  H01S5/026 ,  H01S5/183

CPC分类号： H01S5/426 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/041 ,  H01S5/18311 ,  H01S5/18369

摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device (66) and a method of fabricating the device utilize two separate substrates (70 and 74) that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light (76) to drive the device to emit output laser (78) light having a long peak wavelength. Preferably, the output laser light has a peak wavelength between 1250 nm and 1700 nm, which is desirable for applications in the field of optical communications. The optically pumped VCSEL device includes a short-wavelength VCSEL (68) formed on one (70) of the two substrates and a long-wavelength VCSEL (72) formed on the other substrate (74). The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material (88) may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. Preferably, flip-chip technology is used for the bonding step. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.

摘要翻译： 光泵浦垂直腔表面发射激光器（VCSEL）器件（66）和制造该器件的方法利用两个分离的衬底（70和74），其执行滤波操作，以仅选择性地透射具有长峰值波长的光 由设备生成。 光泵浦VCSEL装置是可以产生泵浦光（76）以驱动装置发射输出激光（78）具有长峰值波长的光的自泵浦装置。 优选地，输出激光具有在1250nm和1700nm之间的峰值波长，这对于在光通信领域中的应用是期望的。 光泵浦VCSEL器件包括形成在两个衬底的一个（70）上的短波长VCSEL（68）和形成在另一衬底（74）上的长波长VCSEL（72）。 短波长VCSEL是产生短波长光以驱动（即光泵浦）长波长VCSEL的电流驱动VCSEL。 短波长VCSEL和长波长VCSEL被结合在一起，使得两个基板被两个VCSEL隔开。 可以使用透明光学粘合材料或金属粘合材料（88）将短波长VCSEL粘合到长波长VCSEL上。 优选地，倒装芯片技术用于接合步骤。 衬底相对于传播光是波长选择性的，使得由短波长VCSEL产生的并且不被长波长VCSEL吸收的短波长光主要被两个分开的衬底吸收。 然而，允许由长波长VCSEL产生的长波长光作为输出激光透过基板。

公开(公告)号：EP1026798A2

公开(公告)日：2000-08-09

申请号：EP00101952.0

申请日：2000-02-01

申请人： Agilent Technologies Inc

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01S5/183

CPC分类号： H01S5/18341 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/32341 ,  H01S2301/163 ,  H01S2301/166 ,  H01S2304/12

摘要： A current confinement region (15, 55) located proximate to a pair of Bragg reflectors (12, 22; 52, 62) in a semiconductor laser (10, 50) and an epitaxial lateral overgrowth layer (16, 58) grown through an aperture (20, 60) in the current confinement region (15, 55) allows a desirable current flow (24, 66) in the laser (10, 50). The placement of the current confinement region (15, 55) having an aperture (20, 60) formed therein allows the desired current flow (24, 66) through an active layer 17, 56) of the laser (10, 50). This current flow (24, 66) allows the laser (10, 50) to achieve a single spatial mode output. Furthermore, the ability to place a pair of Bragg reflectors (12, 22; 52, 62) in close proximity to each other achieves a short optical cavity (23, 65) resulting in a single longitudinal mode output. Together, the single spatial mode and single longitudinal mode result in a desired single frequency output. The single frequency output is particularly useful for high speed, high rate optical and telecommunications.

摘要翻译： 位于靠近一对布拉格反射器的电流限制区域（15，55）（12，22; 52，62）中的半导体激光器（10，50）和侧向外延生长层（16，58）通过向孔中生长 （20，60）在电流限制区域（15，55）允许在所述激光器（10，50）中的理想的电流流动（24，66）。 形成于其中的电流限制区域（15，55），其具有上孔（20，60）的放置通过对激光器（10，50）的活性层17，56）允许所述期望电流（24，66）。 此电流流动（24，66）允许所述激光器（10，50）来实现一个单一的空间模式的输出。 进一步，为了将一对布拉格反射器的能力（12，22; 52，62）在靠近海誓山盟实现了单纵模输出而产生的短光腔（23，65）。 一起，单空间模式和单纵模产生期望的单频输出。 单一频率输出是一个高速，高倍率的光学和电信特别有用。

公开(公告)号：EP1085365A3

公开(公告)日：2003-08-13

申请号：EP00114524.2

申请日：2000-07-06

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Yang, Long ,  Wang, Shih-Yuan

IPC分类号： G02F1/31 ,  G02F1/15 ,  G02F1/19

CPC分类号： G02F1/31 ,  G02F1/1523 ,  G02F1/19 ,  G02F2202/34 ,  G02F2203/02

摘要： An optical cross-connect switch[10] for routing light signals between N input optical fibers[12] and M output optical fibers[14]. The switch utilizes an NxM array of optical switching elements[15,16], each optical switching element[15,16] routing a light signal from one of the input optical fibers[12] to one of the output optical fibers[14]. Each optical switching element[15,16] includes a layer of a switching material, first and second transparent electrodes[32,35] overlying the layer of switching material[34], and a layer of hydrogen reservoir material[33] adjacent to the layer of switching material[34]. The switching material has first and second states. The switching material is transparent to the light signals in the first state, and the switching material reflects the light signals in the second state. The state of the switching material is determined by the concentration of hydrogen in the material. The hydrogen reservoir material supplies hydrogen to the switching material when a first potential difference is applied between the first and second electrodes[32,35] and absorbs hydrogen from the switching material when a second potential difference is applied between the first and second electrodes[32,35]. The switching material preferably includes a material chosen from the group consisting of alkali, alkaline-earth, rare-earth metals, and the alloys and hydrides thereof.

公开(公告)号：EP1026798A3

公开(公告)日：2002-08-28

申请号：EP00101952.0

申请日：2000-02-01

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01S5/183

CPC分类号： H01S5/18341 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/32341 ,  H01S2301/163 ,  H01S2301/166 ,  H01S2304/12

摘要： A current confinement region (15, 55) located proximate to a pair of Bragg reflectors (12, 22; 52, 62) in a semiconductor laser (10, 50) and an epitaxial lateral overgrowth layer (16, 58) grown through an aperture (20, 60) in the current confinement region (15, 55) allows a desirable current flow (24, 66) in the laser (10, 50). The placement of the current confinement region (15, 55) having an aperture (20, 60) formed therein allows the desired current flow (24, 66) through an active layer 17, 56) of the laser (10, 50). This current flow (24, 66) allows the laser (10, 50) to achieve a single spatial mode output. Furthermore, the ability to place a pair of Bragg reflectors (12, 22; 52, 62) in close proximity to each other achieves a short optical cavity (23, 65) resulting in a single longitudinal mode output. Together, the single spatial mode and single longitudinal mode result in a desired single frequency output. The single frequency output is particularly useful for high speed, high rate optical and telecommunications.

公开(公告)号：EP1162856A2

公开(公告)日：2001-12-12

申请号：EP01100986.7

申请日：2001-01-17

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Wang, Shih-Yuan

IPC分类号： H04Q11/00

CPC分类号： H04Q11/0005 ,  H04Q2011/0026

摘要： A cross-connect switch[100] for switching light signals arriving on N input optical fibers[110] to M out optical fibers[140]. The switch includes NxM mirror elements[121, 123] arranged as N rows and M columns of mirror elements[121, 123]. Each mirror element has a reflecting state and a non-reflecting state. In the reflecting state, each mirror element reflects light from a corresponding one of the input optical fibers[110] to a corresponding one of the out optical fibers[140]. Each mirror element is positioned in the non-reflecting state such that the mirror element does not intercept light from any of the input optical fibers[110]. All of the mirror elements[121, 123] corresponding to a given input optical fiber are located on the same row and all mirror elements[121, 123] corresponding to a given output optical fiber are located in the same column. The switch also includes a plurality of re-collimating lenses[131, 132], one such re-collimating lens[131] is located between two of the mirror elements[121, 123] in each of the rows of mirror elements[121, 123]. Each re-collimating lens collimates light from the input optical fiber[110] corresponding to that row. The switch also includes one such re-collimating lens[132] between two of the mirror elements[121, 123] in each of the columns of mirror elements[121, 123].

摘要翻译： 一个交叉连接开关，用于将到达N个输入光纤Ä110Ü的光信号切换到M为光纤Ä140。 该开关包括被配置为N列和M列的镜元件Ä121,123Ü的NxM镜元件12312,123。 每个镜子元件具有反射状态和非反射状态。 在反射状态下，每个反射镜元件将来自输入光纤Y110的相应一个的光反射到对应的一个出口的光纤Ä140。 每个镜元件被定位在非反射状态，使得镜子元件不会遮挡来自任何输入光纤Y110的光。 对应于给定输入光纤的所有反射镜元件Ä121,123u位于同一行上，对应于给定输出光纤的所有反射镜元件Ä121,123u位于同一列中。 该开关还包括多个重新准直透镜Ä131,132Ü，一个这样的重新准直透镜Ä131is位于每个反射镜元件Ä121,123the的每一个中的两个反射镜元件Ä121,1123之间。 每个再准直透镜对来自对应于该行的输入光纤1101u的光进行准直。 该开关还包括在每个镜子元件Ä121,123the的每一列中的两个镜元件Ä121,123includes之间的一个这样的重新准直透镜。

公开(公告)号：EP1037341A3

公开(公告)日：2001-09-05

申请号：EP00102463.7

申请日：2000-02-04

申请人： Agilent Technologies Inc. a Delaware Corporation

发明人： Tan, Michael R. T. ,  Babic, Dubravko I. ,  Corzine, Scott W. ,  Ranganath, Tirmula R. ,  Wang, Shih-Yuan ,  Bi, Wayne

IPC分类号： H01S5/04 ,  H01S5/026 ,  H01S5/183

CPC分类号： H01S5/426 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/041 ,  H01S5/18311 ,  H01S5/18369

摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device (66) and a method of fabricating the device utilize two separate substrates (70 and 74) that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light (76) to drive the device to emit output laser (78) light having a long peak wavelength. Preferably, the output laser light has a peak wavelength between 1250 nm and 1700 nm, which is desirable for applications in the field of optical communications. The optically pumped VCSEL device includes a short-wavelength VCSEL (68) formed on one (70) of the two substrates and a long-wavelength VCSEL (72) formed on the other substrate (74). The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material (88) may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. Preferably, flip-chip technology is used for the bonding step. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.