摘要:
An optical assembly (10) includes an optical subassembly (40) containing a prefabricated long wavelength laser (30) optically coupled to a prefabricated short wavelength laser (20) located in a housing (18). The optical subassembly (40) may be removably installed in the housing (18) in which the short wavelength laser (20) is contained. The short wavelength laser (20) optically pumps the long wavelength laser (30) resulting in a long wavelength laser output (17). The optical subassembly (40) allows the independent fabrication, optimization and testing of the short wavelength laser (20) and the long wavelength laser (30).
摘要:
An optically pumped vertical-cavity surface-emitting laser (VCSEL) device (66) and a method of fabricating the device utilize two separate substrates (70 and 74) that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light (76) to drive the device to emit output laser (78) light having a long peak wavelength. Preferably, the output laser light has a peak wavelength between 1250 nm and 1700 nm, which is desirable for applications in the field of optical communications. The optically pumped VCSEL device includes a short-wavelength VCSEL (68) formed on one (70) of the two substrates and a long-wavelength VCSEL (72) formed on the other substrate (74). The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material (88) may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. Preferably, flip-chip technology is used for the bonding step. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要:
A vertical cavity surface-emitting laser (400, 500), and method of fabricating such a laser, for use in an optical communication system (100) including an optical cavity (223, 323) arranged between a pair of distributed Bragg reflectors (402/404, 502/504), an active region (217) in the optical cavity, and an oxidized current confinement layer (215, 315) arranged on one side of the active layer. The current confinement layer includes a component, such as antimony, that is segregated into a conductive layer on one side (221, 321) of the current confinement layer during oxidation.
摘要:
An optically pumped vertical-cavity surface-emitting laser (VCSEL) device (66) and a method of fabricating the device utilize two separate substrates (70 and 74) that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light (76) to drive the device to emit output laser (78) light having a long peak wavelength. Preferably, the output laser light has a peak wavelength between 1250 nm and 1700 nm, which is desirable for applications in the field of optical communications. The optically pumped VCSEL device includes a short-wavelength VCSEL (68) formed on one (70) of the two substrates and a long-wavelength VCSEL (72) formed on the other substrate (74). The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material (88) may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. Preferably, flip-chip technology is used for the bonding step. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要:
An optical assembly (10) includes an optical subassembly (40) containing a prefabricated long wavelength laser (30) optically coupled to a prefabricated short wavelength laser (20) located in a housing (18). The optical subassembly (40) may be removably installed in the housing (18) in which the short wavelength laser (20) is contained. The short wavelength laser (20) optically pumps the long wavelength laser (30) resulting in a long wavelength laser output (17). The optical subassembly (40) allows the independent fabrication, optimization and testing of the short wavelength laser (20) and the long wavelength laser (30).
摘要:
A vertical cavity surface emitting laser (VCSEL 10) including two undoped distributed Bragg reflectors (DBRs 16,18) and an undoped active region (14) therebetween, and employing lateral current injection to the undoped active region (14) minimizes optical loss within the laser. A periodic gain structure may also be employed in the VCSEL (10), thus maximizing gain in the undoped active region (14). The undoped distributed Bragg reflectors (DBRs) in the VCSEL, reduce the optical loss within the cavity.
摘要:
A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.