公开(公告)号：EP0982819B1

公开(公告)日：2005-06-01

申请号：EP99112852.1

申请日：1999-07-02

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01S5/02 ,  H01S5/323

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/2232 ,  H01S5/3201 ,  H01S2304/12

公开(公告)号：EP1081538A2

公开(公告)日：2001-03-07

申请号：EP00114523.4

申请日：2000-07-06

申请人： Agilent Technologies Inc

发明人： Chen, Yong ,  Corzine, Scott W. ,  Wang, Shih-Yuan

IPC分类号： G02F1/19 ,  G02F1/315 ,  G02F1/21 ,  G11C13/04

CPC分类号： G11C13/041 ,  G02F1/19 ,  G02F1/21 ,  G02F1/315 ,  G02F2203/02 ,  G02F2203/023

摘要： An optical element having a variable index of refraction. The optical element utilizes a layer of a transparent dielectric material having an index of refraction determined by the concentration of hydrogen in the dielectric material. A layer of a hydrogen reservoir medium that includes a material that acts as a source or a sink for hydrogen is placed adjacent to the transparent dielectric layer. The reservoir medium accepts hydrogen from the transparent layer in response to a first electric field being applied across the transparent layer and reservoir layer and donates hydrogen to the transparent layer in response to a second electric field being applied across the transparent layer and the reservoir layer. The electric fields are generated by applying appropriate potentials across first and second electrodes that sandwich the dielectric and reservoir layers. The preferred reservoir material is KOH. The transparent dielectric material preferably includes a material chosen from the group consisting of hydrides of an alkali, alkaline-earth, rare-earth metals, and alloys thereof.

摘要翻译： 具有可变折射率的光学元件。 光学元件利用透明电介质材料层，其具有通过介电材料中的氢浓度确定的折射率。 包含充当氢源的材料或氢的沉积物的氢储层介质的层被放置在与透明介电层相邻的位置。 储存介质响应于穿过透明层和储存层施加第一电场而从透明层接收氢，并响应于穿过透明层和储存层施加的第二电场而将氢提供给透明层。 通过在夹持电介质层和储层的第一和第二电极上施加合适的电势来产生电场。 优选的储层材料是KOH。 透明电介质材料优选包括选自碱金属，碱土金属，稀土金属的氢化物及其合金的材料。

公开(公告)号：EP1085365A2

公开(公告)日：2001-03-21

申请号：EP00114524.2

申请日：2000-07-06

申请人： Agilent Technologies Inc

发明人： Chen, Yong ,  Yang, Long ,  Wang, Shih-Yuan

IPC分类号： G02F1/31 ,  G02F1/15 ,  G02F1/19

CPC分类号： G02F1/31 ,  G02F1/1523 ,  G02F1/19 ,  G02F2202/34 ,  G02F2203/02

摘要： An optical cross-connect switch[10] for routing light signals between N input optical fibers[12] and M output optical fibers[14]. The switch utilizes an NxM array of optical switching elements[15,16], each optical switching element[15,16] routing a light signal from one of the input optical fibers[12] to one of the output optical fibers[14]. Each optical switching element[15,16] includes a layer of a switching material, first and second transparent electrodes[32,35] overlying the layer of switching material[34], and a layer of hydrogen reservoir material[33] adjacent to the layer of switching material[34]. The switching material has first and second states. The switching material is transparent to the light signals in the first state, and the switching material reflects the light signals in the second state. The state of the switching material is determined by the concentration of hydrogen in the material. The hydrogen reservoir material supplies hydrogen to the switching material when a first potential difference is applied between the first and second electrodes[32,35] and absorbs hydrogen from the switching material when a second potential difference is applied between the first and second electrodes[32,35]. The switching material preferably includes a material chosen from the group consisting of alkali, alkaline-earth, rare-earth metals, and the alloys and hydrides thereof.

摘要翻译： 用于在N个输入光纤12和M个输出光纤14之间路由光信号的光交叉连接开关10。 该开关利用光开关元件15,16的N×M阵列，每个光开关元件15,16将来自输入光纤12之一的光信号传送到输出光纤14之一。 每个光开关元件15,16包括开关材料层，覆盖开关材料层34的第一和第二透明电极32,35以及与开关材料层34相邻的一层氢储存器材料33。 开关材料具有第一和第二状态。 开关材料在第一状态下对于光信号是透明的，并且开关材料在第二状态下反射光信号。 开关材料的状态由材料中的氢的浓度决定。 当在第一和第二电极32,35之间施加第一电位差时，氢储存器材料向开关材料供应氢，并且当在第一和第二电极32,35之间施加第二电位差时，从开关材料吸收氢。 切换材料优选包括选自碱金属，碱土金属，稀土金属的材料及其合金和氢化物。

公开(公告)号：EP1059661A2

公开(公告)日：2000-12-13

申请号：EP00111392.7

申请日：2000-05-26

申请人： Agilent Technologies Inc

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01L21/20

CPC分类号： H01L21/02455 ,  C30B25/04 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647

摘要： An epitaxial material (55) grown laterally from a surface (56a, 56b) formed in a first epitaxial material (52) having a different lattice parameter allows for the formation of epitaxial material (55) that includes a region (60) that is substantially free of cracks (17). Growing a second epitaxial material (55) from a side wall (56a, 56b) of a trench (57) formed in a first epitaxial material (52) having a different lattice parameter rotates the growth direction of the second epitaxial material (55) through approximately 90° with respect to the major surface (63) of the first epitaxial material (52). In this manner, cracks (17) that occur in the second epitaxial material (55) tend to occur in the direction perpendicular to the side wall (56a, 56b) from which the second epitaxial growth initiates, which direction is also parallel to the major surface (63) of the first epitaxial material (52). This results in a substantially crack-free epitaxial material (60) growing out of the trench (57). The substantially crack-free epitaxial material (60) may by used as a platform from which to grow successive epitaxial layers.

公开(公告)号：EP1085365A3

公开(公告)日：2003-08-13

申请号：EP00114524.2

申请日：2000-07-06

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Yang, Long ,  Wang, Shih-Yuan

IPC分类号： G02F1/31 ,  G02F1/15 ,  G02F1/19

CPC分类号： G02F1/31 ,  G02F1/1523 ,  G02F1/19 ,  G02F2202/34 ,  G02F2203/02

摘要： An optical cross-connect switch[10] for routing light signals between N input optical fibers[12] and M output optical fibers[14]. The switch utilizes an NxM array of optical switching elements[15,16], each optical switching element[15,16] routing a light signal from one of the input optical fibers[12] to one of the output optical fibers[14]. Each optical switching element[15,16] includes a layer of a switching material, first and second transparent electrodes[32,35] overlying the layer of switching material[34], and a layer of hydrogen reservoir material[33] adjacent to the layer of switching material[34]. The switching material has first and second states. The switching material is transparent to the light signals in the first state, and the switching material reflects the light signals in the second state. The state of the switching material is determined by the concentration of hydrogen in the material. The hydrogen reservoir material supplies hydrogen to the switching material when a first potential difference is applied between the first and second electrodes[32,35] and absorbs hydrogen from the switching material when a second potential difference is applied between the first and second electrodes[32,35]. The switching material preferably includes a material chosen from the group consisting of alkali, alkaline-earth, rare-earth metals, and the alloys and hydrides thereof.

公开(公告)号：EP1026798A3

公开(公告)日：2002-08-28

申请号：EP00101952.0

申请日：2000-02-01

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01S5/183

CPC分类号： H01S5/18341 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/32341 ,  H01S2301/163 ,  H01S2301/166 ,  H01S2304/12

摘要： A current confinement region (15, 55) located proximate to a pair of Bragg reflectors (12, 22; 52, 62) in a semiconductor laser (10, 50) and an epitaxial lateral overgrowth layer (16, 58) grown through an aperture (20, 60) in the current confinement region (15, 55) allows a desirable current flow (24, 66) in the laser (10, 50). The placement of the current confinement region (15, 55) having an aperture (20, 60) formed therein allows the desired current flow (24, 66) through an active layer 17, 56) of the laser (10, 50). This current flow (24, 66) allows the laser (10, 50) to achieve a single spatial mode output. Furthermore, the ability to place a pair of Bragg reflectors (12, 22; 52, 62) in close proximity to each other achieves a short optical cavity (23, 65) resulting in a single longitudinal mode output. Together, the single spatial mode and single longitudinal mode result in a desired single frequency output. The single frequency output is particularly useful for high speed, high rate optical and telecommunications.

公开(公告)号：EP1059662A1

公开(公告)日：2000-12-13

申请号：EP00111393.5

申请日：2000-05-26

申请人： Agilent Technologies Inc

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01L21/20

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： A method for detaching an epitaxial layer (17, 37) from one substrate (11) and transferring it to another substrate (18) allows an epitaxially grown material layer to be easily detached from a first substrate (11) that has good epitaxial growth properties and transferred to another substrate (18) having better cleaving, electrical or other properties than the first substrate (11). A mask (14) is applied to a portion of a surface of the first epitaxial layer (12) and a second epitaxial layer (17, 37) is grown over the first epitaxial layer (12) and the mask (14). A trench (20) is formed in the second epitaxial layer (17, 37) to expose the mask (14) and a second substrate (18) is bonded to the second epitaxial layer (17, 37). An etchant is introduced through the trench (20) and etches away the mask (14), thus releasing the second epitaxial layer (17, 37) from the first substrate (11) and the first epitaxial layer (12). Thus, the second epitaxial layer (17, 37) has been released from the first substrate (11) and transferred to the second substrate (18) without performing operations that would impair the optical properties of the epitaxial material.

摘要翻译： 外延生长材料层在外延层（17，37）从一个衬底（11）和传递环它分离到另一基板上的方法（18），允许以从第一衬底（11）那样容易地拆卸具有良好的外延生长特性 并转移到具有更好的切割，电或其它性质比第一基板（11）的另一个基板（18）。 掩模（14）被施加到所述第一外延层（12）和第二外延层（17，37）的一个表面的一部分上生长第一外延层（12）和所述掩模（14）。 沟槽（20）在所述第二外延层（17，37），以暴露所述掩模（14）和第二衬底（18）键合到所述第二外延层（17，37）形成。 蚀刻剂通过沟槽（20）中引入并蚀刻掉掩模（14），从而释放从第一基板（11）和所述第一外延层（12）的第二外延层（17，37）。 因此，第二外延层（17，37）已经从所述第一基板（11）释放并转移到第二基片（18）而无需执行行动并会损害所述外延材料的光学性质。

公开(公告)号：EP1026798A2

公开(公告)日：2000-08-09

申请号：EP00101952.0

申请日：2000-02-01

申请人： Agilent Technologies Inc

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01S5/183

CPC分类号： H01S5/18341 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/32341 ,  H01S2301/163 ,  H01S2301/166 ,  H01S2304/12

摘要： A current confinement region (15, 55) located proximate to a pair of Bragg reflectors (12, 22; 52, 62) in a semiconductor laser (10, 50) and an epitaxial lateral overgrowth layer (16, 58) grown through an aperture (20, 60) in the current confinement region (15, 55) allows a desirable current flow (24, 66) in the laser (10, 50). The placement of the current confinement region (15, 55) having an aperture (20, 60) formed therein allows the desired current flow (24, 66) through an active layer 17, 56) of the laser (10, 50). This current flow (24, 66) allows the laser (10, 50) to achieve a single spatial mode output. Furthermore, the ability to place a pair of Bragg reflectors (12, 22; 52, 62) in close proximity to each other achieves a short optical cavity (23, 65) resulting in a single longitudinal mode output. Together, the single spatial mode and single longitudinal mode result in a desired single frequency output. The single frequency output is particularly useful for high speed, high rate optical and telecommunications.

摘要翻译： 位于靠近一对布拉格反射器的电流限制区域（15，55）（12，22; 52，62）中的半导体激光器（10，50）和侧向外延生长层（16，58）通过向孔中生长 （20，60）在电流限制区域（15，55）允许在所述激光器（10，50）中的理想的电流流动（24，66）。 形成于其中的电流限制区域（15，55），其具有上孔（20，60）的放置通过对激光器（10，50）的活性层17，56）允许所述期望电流（24，66）。 此电流流动（24，66）允许所述激光器（10，50）来实现一个单一的空间模式的输出。 进一步，为了将一对布拉格反射器的能力（12，22; 52，62）在靠近海誓山盟实现了单纵模输出而产生的短光腔（23，65）。 一起，单空间模式和单纵模产生期望的单频输出。 单一频率输出是一个高速，高倍率的光学和电信特别有用。

公开(公告)号：EP1081538A3

公开(公告)日：2003-08-13

申请号：EP00114523.4

申请日：2000-07-06

申请人： Agilent Technologies, Inc. (a Delaware corporation)

发明人： Chen, Yong ,  Corzine, Scott W. ,  Wang, Shih-Yuan

IPC分类号： G02F1/19 ,  G02F1/315 ,  G02F1/21 ,  G11C13/04

CPC分类号： G11C13/041 ,  G02F1/19 ,  G02F1/21 ,  G02F1/315 ,  G02F2203/02 ,  G02F2203/023

摘要： An optical element having a variable index of refraction. The optical element utilizes a layer of a transparent dielectric material having an index of refraction determined by the concentration of hydrogen in the dielectric material. A layer of a hydrogen reservoir medium that includes a material that acts as a source or a sink for hydrogen is placed adjacent to the transparent dielectric layer. The reservoir medium accepts hydrogen from the transparent layer in response to a first electric field being applied across the transparent layer and reservoir layer and donates hydrogen to the transparent layer in response to a second electric field being applied across the transparent layer and the reservoir layer. The electric fields are generated by applying appropriate potentials across first and second electrodes that sandwich the dielectric and reservoir layers. The preferred reservoir material is KOH. The transparent dielectric material preferably includes a material chosen from the group consisting of hydrides of an alkali, alkaline-earth, rare-earth metals, and alloys thereof.

公开(公告)号：EP1037344A1

公开(公告)日：2000-09-20

申请号：EP00102446.2

申请日：2000-02-04

申请人： Agilent Technologies Inc

发明人： Wang, Shih-Yuan ,  Chen, Yong

IPC分类号： H01S5/323 ,  H01S5/24

CPC分类号： B82Y20/00 ,  H01S5/2232 ,  H01S5/227 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00 ,  H01S2304/04 ,  H01S2304/12

摘要： A laser diode[200] that is constructed in a trench[216] in a manner such that the material in the trench[216] acts as a waveguide. The laser diode[200] includes a first contact layer[214] constructed from a first semiconducting material of a first carrier type, the first semiconducting material having a first index of refraction. The first contact layer[214] has a trench[216] therein. The trench[216] has a layer of a second semiconducting material of the first carrier type on the bottom surface. The index of refraction of the second semiconducting material is at least one percent greater than the index of refraction of the first semiconducting material. The laser also includes a first dielectric layer[215] covering the first layer in those regions outside of the trench[216] and a first cladding layer[221] constructed from a third semiconducting material of the first carrier type. The first cladding layer[221] overlies the dielectric layer. An active layer[222] overlies the first cladding layer[221]. A second cladding layer[223] constructed from a fourth semiconducting material of the opposite carrier type from the first carrier type overlies the active layer[222]. A second contact layer[224] of a fifth semiconducting material of the opposite carrier type from the first carrier type overlies the second cladding layer[223]. The invention is particularly well suited for constructing laser diodes based on group III-V material systems such as GaN.

摘要翻译： 激光二极管Ä200Ü，其以沟槽Ä216Ü构造，使得沟槽中的材料作为波导。 激光二极管200包括由第一载体类型的第一半导体材料构成的第一接触层Ä214，第一半导体材料具有第一折射率。 第一接触层Ä214Ü在其中具有Ф216Ü。 沟槽2101在底面具有第一载体类型的第二半导体材料层。 第二半导体材料的折射率比第一半导体材料的折射率大至少一个百分点。 该激光器还包括覆盖在沟槽外部区域中的那些区域中的第一层的第一介电层Ä215Ü以及由第一载流子类型的第三半导体材料构成的第一覆层Y. 第一覆层层221a覆盖在介电层上。 活性层Ä222Ü覆盖在第一包层2222上。 由与第一载体类型相反的载体类型的第四半导体材料构成的第二覆层21a22u覆盖有源层2322。 与第一载体类型相反的载体类型的第五半导体材料的第二接触层2324u覆盖在第二覆层2322上。 本发明特别适用于构建基于III-V族材料系统如GaN的激光二极管。