摘要:
An article of manufacture, method, and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article (205) having a body comprising at least a portion (310) of fibers coated with a conductive material, conductive fillers, or combinations thereof, and adapted to polish the substrate. In another aspect, a polishing article includes a body having a surface adapted to polish the substrate and at least one conductive element embedded in the polishing surface, the conductive element comprising dielectric or conductive fibers coated with a conductive material, conductive fillers, or combinations thereof. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. A plurality of perforations (546) and a plurality of grooves (542) may be formed in the articles to facilitate flow of material through and around the polishing article.
摘要:
The disclosure relates to a system and method that deposits an electroless seed layer on a substrate prior to subsequent processing. The system is designed with flexible architecture and can be configured in several ways. The electroless deposition process is performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimise oxidation. The system generally includes a mainframe (214) having a mainframe substrate transfer robot (228), a loading station (210) disposed in connection with the mainframe, one or more processing facilities (218) disposed in connection with the mainframe, and an electroless supply (220) fluidly connected to the one or more processing applicators (240). Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station (212) disposed between the loading station and the mainframe, a rapid thermal anneal chamber (211) attached to the loading station, and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system. The electroless deposition fills defects and discontinues in the activation, or seed, layer and allows subsequent processing, such as electroplating, to fill the remainder of the features without substantial voids in the deposited material.
摘要:
An article of manufacture, method, and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article (205) having a body comprising at least a portion (310) of fibers coated with a conductive material, conductive fillers, or combinations thereof, and adapted to polish the substrate. In another aspect, a polishing article includes a body having a surface adapted to polish the substrate and at least one conductive element embedded in the polishing surface, the conductive element comprising dielectric or conductive fibers coated with a conductive material, conductive fillers, or combinations thereof. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. A plurality of perforations (546) and a plurality of grooves (542) may be formed in the articles to facilitate flow of material through and around the polishing article.
摘要:
A method and apparatus for heating and cooling a substrate are provided. A chamber (13) is provided that comprises a heating mechanism (15,15a) adapted to heat a substrate (25) positioned proximate the heating mechanism, a cooling mechanism (39) spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism (29:27) adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop (29) having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto. The chamber preferably includes a pump adapted to evacuate the chamber to a predetermined pressure during at least cooling.
摘要:
The disclosure relates to a system and method that deposits an electroless seed layer on a substrate prior to subsequent processing. The system is designed with flexible architecture and can be configured in several ways. The electroless deposition process is performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimise oxidation. The system generally includes a mainframe (214) having a mainframe substrate transfer robot (228), a loading station (210) disposed in connection with the mainframe, one or more processing facilities (218) disposed in connection with the mainframe, and an electroless supply (220) fluidly connected to the one or more processing applicators (240). Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station (212) disposed between the loading station and the mainframe, a rapid thermal anneal chamber (211) attached to the loading station, and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system. The electroless deposition fills defects and discontinues in the activation, or seed, layer and allows subsequent processing, such as electroplating, to fill the remainder of the features without substantial voids in the deposited material.
摘要:
A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate (190) in an integrated processing system and annealing the copper layer in a chamber (102) inside the integrated processing system.