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    Polishing articles for electrochemical mechanical polishing of substrates
    1.
    发明公开
    Polishing articles for electrochemical mechanical polishing of substrates 有权
    Polierartikel zum elektrochemisch-mechanischen Polieren von Substraten

    公开(公告)号：EP1361023A2

    公开(公告)日：2003-11-12

    申请号：EP03252801.0

    申请日：2003-05-02

    申请人： Applied Materials, Inc.

    发明人： Hu, Yongqi ,  Wang, Yan ,  Duboust, Alain ,  Liu, Feng Q. ,  Mavliev, Rashid ,  Chen, Liang-Yuh ,  Morad, Ratson ,  Somekh, Sasson

    IPC分类号： B24D13/14 ,  B24B37/04

    CPC分类号： B24B37/16 ,  B23H5/08 ,  B24B37/046 ,  B24B37/14 ,  Y10S977/902

    摘要： An article of manufacture, method, and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article (205) having a body comprising at least a portion (310) of fibers coated with a conductive material, conductive fillers, or combinations thereof, and adapted to polish the substrate. In another aspect, a polishing article includes a body having a surface adapted to polish the substrate and at least one conductive element embedded in the polishing surface, the conductive element comprising dielectric or conductive fibers coated with a conductive material, conductive fillers, or combinations thereof. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. A plurality of perforations (546) and a plurality of grooves (542) may be formed in the articles to facilitate flow of material through and around the polishing article.

    摘要翻译： 提供了一种用于平坦化基板表面的制造方法和装置。 一方面，提供了一种制造用品，用于抛光包括抛光制品（205）的基材，所述抛光制品（205）具有主体，该主体包括涂覆有导电材料的纤维的至少一部分（310），导电填料或其组合，并适于 抛光底物。 在另一方面，抛光制品包括具有适于抛光基底的表面和嵌入在抛光表面中的至少一个导电元件的主体，导电元件包括​​涂覆有导电材料的电介质或导电纤维，导电填料或其组合 。 导电元件可以具有延伸超过由抛光表面限定的平面的接触表面。 可以在制品中形成多个穿孔（546）和多个凹槽（542），以促进材料流过抛光制品周围。

    METHODS AND APPARATUSES FOR ELECTROCHEMICAL-MECHANICAL POLISHING
    2.
    发明授权
    METHODS AND APPARATUSES FOR ELECTROCHEMICAL-MECHANICAL POLISHING 有权
    方法 - 电动化学机械研磨工具

    公开(公告)号：EP1732732B1

    公开(公告)日：2009-11-11

    申请号：EP05723147.4

    申请日：2005-02-14

    申请人： Micron Technology, Inc.

    发明人： LEE, Whonchee

    IPC分类号： B24B37/04

    CPC分类号： B24B37/042 ,  B24B37/046 ,  B24B37/26

    摘要： Methods and apparatuses for removing material from a microfeature workpiece are disclosed. In one embodiment, the microfeature workpiece is contacted with a polishing surface of a polishing medium, and is placed in electrical communication with first and second electrodes, at least one of which is spaced apart from the workpiece. A polishing liquid is disposed between the polishing surface and the workpiece and at least one of the workpiece and the polishing surface is moved relative to the other. Material is removed from the microfeature workpiece and at least a portion of the polishing liquid is passed through at least one recess in the polishing surface so that a gap in the polishing liquid is located between the microfeature workpiece and the surface of the recess facing toward the microfeature workpiece.

    ABRASIVE ARTICLE FOR THE DEPOSITION AND POLISHING OF A CONDUCTIVE MATERIAL
    6.
    发明公开
    ABRASIVE ARTICLE FOR THE DEPOSITION AND POLISHING OF A CONDUCTIVE MATERIAL 审中-公开
    磨分离和抛光的导电材料

    公开(公告)号：EP1465750A1

    公开(公告)日：2004-10-13

    申请号：EP02805057.3

    申请日：2002-10-15

    申请人： 3M Innovative Properties Company

    发明人： LUGG, Paul S.,

    IPC分类号： B24B37/04 ,  B24D3/28 ,  B24D7/18 ,  B24B57/02

    CPC分类号： B24B37/26 ,  B24B37/046 ,  B24B57/02 ,  B24D3/28 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/24479

    摘要： An abrasive article (12) is described. The article (12) is suitable for the deposition and mechanical polishing of a conductive material, and comprises: a polishing layer having a textured surface (102) comprising a binder and a second surface opposite the textured surface (102), the polishing layer further comprising a first channel (104) extending therethrough; a backing (118) having a first backing surface and a second backing surface, the first backing surface associated with the second surface of the polishing layer, the backing (118) comprising a second channel (140, 148) coextensive with the first channel (104) and extending through the backing from the first backing surface to the second backing surface; the first channel (104) and the second channel (140, 148) dimensioned with respect to one another so that the textured surface (102) of the polishing layer is outside of a line of sight (a).

    METHODS AND APPARATUS FOR ELECTRICAL, MECHANICAL AND/OR CHEMICAL REMOVAL OF CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE
    7.
    发明公开
    METHODS AND APPARATUS FOR ELECTRICAL, MECHANICAL AND/OR CHEMICAL REMOVAL OF CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE 审中-公开
    METHODS AND APPARATUS FOR电，机械和/或材料的微电子衬底的官员的化学去除

    公开(公告)号：EP1399956A2

    公开(公告)日：2004-03-24

    申请号：EP02744464.5

    申请日：2002-06-20

    申请人： Micron Technology, Inc.

    发明人： LEE, Whonchee ,  MEIKLE, Scott G. ,  MOORE, Scott E. ,  DOAN, Trung T.

    IPC分类号： H01L21/321 ,  B24B37/04

    CPC分类号： B24B37/046 ,  C25F3/30 ,  C25F5/00 ,  C25F7/00 ,  H01L21/32125

    摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad,electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential,and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate, disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid, and movingat least one of the microelectronic and the polishing pad relative to the other.

    Method and apparatus for chemical mechanical polishing
    8.
    发明公开
    Method and apparatus for chemical mechanical polishing 有权
    化学机械抛光的方法和设备

    公开(公告)号：EP1362670A2

    公开(公告)日：2003-11-19

    申请号：EP03011243.7

    申请日：2003-05-16

    申请人： TOKYO SEIMITSU CO.,LTD. ,  Doi, Toshiro

    发明人： Doi, Toshiro ,  Fujita, Takashi

    IPC分类号： B24B37/04

    CPC分类号： B24B37/046 ,  B24B37/042

    摘要： A polishing device (16) is hermetically accommodated in a chamber (13) containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device (16) is altered into the composition different from the ambient air, and voltage is applied between a wafer (W) and a polishing pad (34a) to polish the wafer (W) with an electrolytic effect. The polishing device (16) has the atmosphere containing extremely less oxygen, preventing a surface of the wafer (W) from oxidation and thereby providing a constant polishing rate.

    摘要翻译： 抛光装置（16）被密封地容纳在包含具有与周围空气不同组成的气氛的室（13）中，使得抛光装置（16）周围的气氛改变成与周围空气不同的组成，并且 在晶片（W）与研磨垫（34a）之间施加电压，通过电解效应研磨晶片（W）。 抛光装置（16）具有包含极少氧气的气氛，防止晶片（W）的表面氧化并由此提供恒定的抛光速率。