公开(公告)号：EP1299900A4

公开(公告)日：2007-09-26

申请号：EP01946718

申请日：2001-06-27

申请人： CREE INC

发明人： FLYNN JEFFREY S ,  BRANDES GEORGE R ,  VAUDO ROBERT P ,  KEOGH DAVID M ,  XU XUEPING ,  LANDINI BARBARA E

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B23/00 ,  C30B25/00 ,  C30B25/02 ,  C30B25/18 ,  C30B33/00 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/32 ,  C30B23/02 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

摘要： A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.