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    SCHNEIDEINSATZ UND VERFAHREN ZU DESSEN HERSTELLUNG
    7.
    发明公开
    SCHNEIDEINSATZ UND VERFAHREN ZU DESSEN HERSTELLUNG 有权

    公开(公告)号：EP2756110A1

    公开(公告)日：2014-07-23

    申请号：EP12761964.1

    申请日：2012-09-17

    申请人： Walter AG

    发明人： STIENS, Dirk ,  RUPPI, Sakari ,  FUHRMANN, Thomas

    IPC分类号： C23C16/40 ,  C23C16/56 ,  C23C28/04

    CPC分类号： B23B27/148 ,  B23C5/20 ,  C23C16/403 ,  C23C16/56 ,  C23C28/044 ,  C23C30/005 ,  C30B25/00 ,  Y10T428/24975

    摘要： Cutting insert made of a hard metal, cermet or ceramic substrate body and a multilayer coating that is applied thereto by means of CVD methods, has a total thickness of 5 to 40 μm, and comprises, starting from the substrate surface, one or more hard material layers, an alpha-aluminum oxide (α-ΑΙ
    2 O
    3 ) layer having a layer thickness of 1 to 20 μm on top of the hard material layers, and optionally one or more additional hard material layers above at least some sections of the α-ΑΙ
    2 O
    3 layer, as decorative or wear recognition layers, characterized in that the α-ΑΙ
    2 O
    3 layer has a crystallographic preferred orientation, characterized by a texture coefficient TC (0 0 12) of formula (I) ≥ 5 for the (0 0 12) growth direction, wherein l(hkl) are the intensities of the diffraction reflections measured using x-ray diffraction, l
    o (hkl) are the standard intensities of the diffraction reflections according to pdf card 42-1468, n is the number of reflections used for the calculation, and the following reflections are used for calculating TC(0 0 12): (0 1 2), (1 0 4), (1 1 0), (1 1 3), (1 1 6), (3 0 0) and (0 0 12), the α-ΑΙ
    2 O
    3 layer has a residual stress in the range of 0 to +300 MPa, and the substrate, within a range of 0 to 10 μm from the substrate surface, has a minimum residual stress in the range of -2000 to -400 MPa.

    摘要翻译： 由硬化金属制成的切削刀片，金属陶瓷或陶瓷基体，通过CVD法施加多层涂层。 该涂层的总厚度为5〜40μm，从基板表面开始，具有1层以上的硬质材料层，1〜20μm的α氧化铝（α-Al 2 O 3）层， 在α-Al 2 O 3层上分为一个或多个另外的硬质材料层作为装饰或磨损识别层。 对于（0 0 12）生长方向，α-Al 2 O 3层具有以纹理系数TC（0 0 12）≥5为特征的晶体优先取向。 α-Al 2 O 3层在0〜+ 300Masas范围内具有固有应力，并且在距离基板表面0〜10μm的范围内的基板在-2000〜-400Mpa的范围内具有固有的应力最小值。

    SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME
    9.
    发明公开
    SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME 有权
    单晶金刚石及其制造方法

    公开(公告)号：EP2752506A1

    公开(公告)日：2014-07-09

    申请号：EP12828541.8

    申请日：2012-08-30

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： IKEDA, Kazuhiro ,  SUMIYA, Hitoshi

    IPC分类号： C30B29/04 ,  C01B31/06

    CPC分类号： C30B29/04 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  C30B7/10 ,  C30B25/00

    摘要： Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12 C is not lower than 99.9 mass % is subjected to denitrification (S1). A carbon source material obtained by thermal decomposition of the hydrocarbon gas subjected to denitrification on a base material in a vacuum chamber, for example, at a temperature not lower than 1200°C and not higher than 2300°C is prepared (S2), diamond is synthesized from the carbon source material, and a seed crystal is cut from the diamond (S3). While this seed crystal is accommodated in a cell together with a solvent and a carbon source, single-crystal diamond is grown from the seed crystal with a high-temperature and high-pressure synthesis method (S4).